參數(shù)資料
型號(hào): 2SB1203RTP
廠商: SANYO SEMICONDUCTOR CO LTD
元件分類: 小信號(hào)晶體管
英文描述: 5000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: TP, 3 PIN
文件頁(yè)數(shù): 2/5頁(yè)
文件大?。?/td> 100K
代理商: 2SB1203RTP
2SB1203/2SD1803
No.2085—2/5
( ) : 2SB1203
Specifications
Absolute Maximum Ratings at Ta = 25C
C
Electrical Characteristics at Ta = 25C
Tc=25C
Switching Time Test Circuit
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* : The 2SB1203/2SD1803 are classified by 0.5A hFE as follows :
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VR
RB
VCC=25V
VBE= --5V
+
50
INPUT
RL
OUTPUT
100F
470F
PW=20s
IB1
D.C.≤1%
IB2
IC=10IB1= --10IB2=2A
(For PNP, the polarity is reversed.)
相關(guān)PDF資料
PDF描述
2SB1205S 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1205T 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1205S 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1205 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1218G-S 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SB1203S 制造商:SANYO Semiconductor Co Ltd 功能描述:
2SB1203SE 制造商:SANYO Semiconductor Co Ltd 功能描述:
2SB1203S-E 功能描述:兩極晶體管 - BJT BIP PNP 5A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SB1203S-H 功能描述:兩極晶體管 - BJT BIP PNP 5A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SB1203S-H-TL-E 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2