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參數(shù)資料
| 型號(hào)： | 2SB0942AQ |
| 廠商： | PANASONIC CORP |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | ROHS COMPLIANT, SC-67, TO-220F-A1, FULL PACK-3 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 241K |
| 代理商： | 2SB0942AQ |
Power Transistors
1
Publication date: February 2003
SJD00022BED
2SB0942 (2SB942), 2SB0942A (2SB942A)
Silicon PNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SD1267, 2SD1267A
■ Features
High forward current transfer ratio h
FE which has satisfactory linearity
Large collector-emitter saturation voltage V
CE(sat)
Full-pack package which can be installed to the heat sink with one screw
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C = 25°C ± 3°C
Unit: mm
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SB0942
VCBO
60
V
(Emitter open)
2SB0942A
80
Collector-emitter voltage 2SB0942
VCEO
60
V
(Base open)
2SB0942A
80
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
4A
Peak collector current
ICP
8A
Collector power
PC
40
W
dissipation
Ta = 25°C2
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage
2SB0942
VCEO
IC
= 30 mA, I
B
= 0
60
V
(Base open)
2SB0942A
80
Base-emitter voltage
VBE
VCE = 4 V, IC = 3 A
2V
Collector-emitter
2SB0942
ICES
VCE
= 60 V, V
BE
= 0
400
A
cutoff current (E-B short)
2SB0942A
VCE = 80 V, VBE = 0
400
Collector-emitter cutoff current (Base open)
ICEO
VCE = 30 V, IB = 0
700
A
Emitter-base cutoff current (Collector open)
IEBO
VEB
= 5 V, I
C
= 0
1mA
Forward current transfer ratio
hFE1 *
VCE = 4 V, IC = 1 A
40
250
hFE2
VCE = 4 V, IC = 3 A
15
Collector-emitter saturation voltage
VCE(sat)
IC
= 4 A, I
B
= 0.4 A
1.5
V
Transition frequency
fT
VCE = 10 V, IC = 0.1 A, f = 10 MHz
30
MHz
Turn-on time
ton
IC = 4 A, IB1 = 0.4 A, IB2 = 0.4 A
0.2
s
Storage time
tstg
VCC
= 50 V
0.5
s
Fall time
tf
0.2
s
Note) The part numbers in the parenthesis show conventional part number.
10.0±0.2
5.5±0.2
7.5
±
0.2
16.7
±
0.3
0.7
±
0.1
14.0
±
0.5
Solder
Dip
(4.0)
0.5
+0.2
–0.1
1.4±0.1
1.3±0.2
0.8±0.1
2.54±0.3
5.08±0.5
2
13
2.7±0.2
4.2±0.2
4.2
±
0.2
φ 3.1±0.1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
Q
P
hFE1
40 to 90
70 to 150
120 to 250
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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| 2SB0942P | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 4A I(C) | TO-220AB |
| 2SB0942PQ | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 4A I(C) | TO-220AB |
| 2SB0942Q | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 4A I(C) | TO-220AB |
| 2SB09430P | 功能描述:TRANS PNP LF 80VCEO 3A TO-220F RoHS:否 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類(lèi)型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類(lèi)型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱(chēng):MMBT489LT1GOSDKR |
| 2SB0943P | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 3A I(C) | TO-220F |
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