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參數(shù)資料
| 型號： | 2SB1050R |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | M-A1, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 198K |
| 代理商： | 2SB1050R |
Transistors
1
Publication date: November 2002
SJC00067BED
2SB1050
Silicon PNP epitaxial planar type
For low-frequency amplification
■ Features
Low collector-emitter saturation voltage V
CE(sat)
Large collctor current I
C
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
30
V
Collector-emitter voltage (Base open)
VCEO
20
V
Emitter-base voltage (Collector open)
VEBO
7V
Collector current
IC
5A
Peak collector current
ICP
8A
Collector power dissipation *
PC
1W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC = 1 mA, IB = 0
20
V
Emitter-base voltage (Collector open)
VEBO
IE
= 10 A, I
C
= 0
7V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 10 V, IE = 0
100
nA
Emitter-base cutoff current (Collector open)
IEBO
VEB = 5 V, IC = 0
100
nA
Forward current transfer ratio *
1, 2
hFE
VCE
= 2 V, I
C
= 2 A
90
625
Collector-emitter saturation voltage *
1
VCE(sat)
IC = 3 A, IB = 0.1 A
1V
Transition frequency
fT
VCB = 6 V, IE = 50 mA, f = 200 MHz
120
MHz
Collector output capacitance
Cob
VCB
= 20 V, I
E
= 0, f = 1 MHz
85
pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Rank
P
Q
R
hFE
90 to135
120 to 205
180 to 625
Note) *: Print circuit board: Copper foil area of 1 cm2 or more, and the board
thickness of 1.7 mm for the collector portion
Unit: mm
1: Base
2: Collector
3: Emitter
M-A1 Package
6.9±0.1
2.5±0.1
(1.0)
(1.5)
(0.85)
0.45±0.05
0.55±0.1
(2.5)
21
3
R 0.7
R 0.9
(0.4)
3.5
±
0.1
4.5
±
0.1
4.1
±
0.2
2.4
±
0.2
1.25
±
0.05
2.0
±
0.2
1.0
±
0.1
(1.5)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1050-RS | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB1051K | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | SOT-23VAR |
| 2SB1051KP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | SOT-23VAR |
| 2SB1051KQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | SOT-23VAR |
| 2SB1051KR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | SOT-23VAR |
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