參數(shù)資料
型號(hào): 2SA830STPB
元件分類: 小信號(hào)晶體管
英文描述: 300 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: SPT, 3 PIN
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 73K
代理商: 2SA830STPB
2SB852K / 2SA830S
Transistors
Rev.A
2/3
Electrical characteristics (Ta=25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
VCB
= 10V, IE=0A, f=1MHz
fT
200
MHz
VCE
= 5V, IE=10mA, f=100MHz
BVCBO
40
V
IC
= 100A
BVCES
32
V
IC
= 1mA
BVEBO
6
V
IE
= 100A
ICBO
1
AVCB= 24V
IEBO
1
AVEB= 4.5V
VCE(sat)
5000
IC
= 200mA, IB= 0.4mA
hFE
1.5
V
VCE
= 5V, IC= 0.1A
Cob
3
pF
2
1
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
1 Measured using pulse current.
2 Transition frequency of the device.
Electrical characteristic curves
0
25
50
75
100
125
150
AMBIENT TEMPERATURE : Ta (
°C)
Fig.1 Power dissipation curves
0
25
50
75
100
125
POWER
DISSIPATION
:
P
C
/P
CMax
(%)
0.4
0.8
1.2
1.6
2.0
2.4
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.2 Ground emitter propagation characteristisc
0
2
5
10
20
50
100
200
500
COLLECTOR
CURRENT
:
I
C
(mA)
VCE
= 6V
Ta
=
100
°C
Ta
=
25
°C
Ta
=
55
°C
0
1
20
40
60
80
100
2
3
4
5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 Ground emitter output characteristics
0
COLLECTOR
CURRENT
:
I
C
(mA)
Ta=25
°C
IB=0
2A
3A
4A
5A
6A
7A
8A
9A
10A
2
5 10 20
50 100 200
500 1000 2000
100000
20000
10000
2000
1000
200
100
500
5000
50000
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs. collector current (
Ι )
DC
CURRENT
GAIN
:
h
FE
Ta=25
°C
VCE=
3V
5V
5 10 20
50 100 200
500 1000 2000
20000
10000
2000
1000
500
5000
50000
COLLECTOR CURRENT : IC (mA)
Fig.5 DC current gain vs. collector current (
ΙΙ )
DC
CURRENT
GAIN
:
h
FE
VCE=
5V
Ta=100
°C
25°
C
55
°C
5
10 20
50 100 200
500 1000
0.1
0.2
0.5
1
2
5
10
20
COLLECTOR CURRENT : IC (mA)
Fig.6 Collector-emitter saturation voltage
vs. collector current
DC
CURRENT
GAIN
:
h
FE
IC/IB=500
Ta=
55°C
100
°C
25
°C
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