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參數(shù)資料
| 型號(hào)： | 2SB852KT146/B |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 300 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SMT3, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 73K |
| 代理商： | 2SB852KT146/B |
2SB852K / 2SA830S
Transistors
Rev.A
1/3
High-gain Amplifier Transistor (
32V, 0.3A)
2SB852K / 2SA830S
Features
1) Darlington connection for high DC current gain.
2) Built-in 4k
resistor between base and emitter.
3) Complements the 2SD1383K / 2SD1645S.
Circuit diagram
RBE
4k
E : Emitter
B : Base
C : Collector
C
B
E
Packaging specifications
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
2SB852K
SMT3
B
T146
3000
2SA830S
SPT
B
TP
5000
Denotes hFE
U
External dimensions (Unit : mm)
Each lead has same dimensions
2SB852K
(1)Emitter
(2)Base
(3)Collector
(2)
(1)
2.8
1.6
0.4
(3)
2.9
1.9
0.95
0.8
0.15
0.3Min.
1.1
Taping specifications
2SA830S
0.45
2.5
(1) (2) (3)
(15Min.)
5.0
3.0
3Min.
0.45
0.5
4.0
2.0
(1)Emitter
(2)Collector
(3)Base
Absolute maximum ratings (Ta=25
°C)
Parameter
Symbol
VCBO
VCES
VEBO
IC
PC
Tj
Tstg
Limits
40
32
6
0.3
0.2
2SB852K
2SA830S
0.3
150
55 to +150
Unit
V
A
W
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
RBE=0
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| 2SB855 | 制造商:Distributed By MCM 功能描述:SUB ONLY HITACHI TRANSISTORTO-220AB -50V -2A 20W BCE |
| 2SB856 | 制造商:Distributed By MCM 功能描述:SUB ONLY HITACHI TRANSISTOR TO -50V -3A 25W BCE |
| 2SB856A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | TO-220AB |
| 2SB856B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | TO-220AB |
| 2SB856C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | TO-220AB |
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