參數(shù)資料
型號(hào)： 2SA2018
廠商： Rohm CO.,LTD.
英文描述： Low frequency transistor
中文描述： 低頻晶體管
文件頁數(shù)： 1/3頁
文件大?。?/td> 80K
代理商： 2SA2018
2SA2018
/
2SA2030
/
2SA2119K
Transistors
Rev.A 1/2
Low frequency transistor
2SA2018 / 2SA2030 / 2SA2119K
The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes.
z
Applications
For switching, for muting.
z
Features
1) A collector current is large.
2) Collector saturation voltage is low.
V
CE (sat)
≤
250mA
At I
C
= 200mA / I
B
= 10mA
z
Absolute maximum ratings
(Ta=25
°
C)
Parameter
Symbol
V
CBO
V
CEO
I
C
I
CP
P
C
Tstg
Limits
15
12
500
1
150
55 to
+
150
Unit
V
V
mA
A
mW
°
C
°
C
Collector-base voltage
Collector-emitter voltage
Collector power dissipation
Storage temperature
Single pulse, Pw
=
1ms
z
Electrical characteristics
(Ta=25
°
C)
Collector current
Tj
150
Junction temperature
SMT3
300
VMT3
EMT3
z
External dimensions
(Unit : mm)
(1) Emitter
(2) Base
(3) Collector
ROHM : EMT3
EIAJ : SC-75A
JEDEC : SOT-416
1
0
0
0.1Min.
0
0
1.6
1
0
0.8
(2)
0
(3)
0
(1)
Each lead has same dimensions
Abbreviated symbol :
BW
2SA2018
0
0
0.3Min.
1
(
(
2.8
1.6
0
(
2
1
0
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
JEDEC : SOT-346
Each lead has same dimensions
Abbreviated symbol :
BW
2SA2119K
(3)
0
0
1
0
0
0
1.2
0.8
0.2
0.2
(2)
(1)
(1) Base
(2) Emitter
(3) Collector
ROHM : VMT3
Each lead has same dimensions
Abbreviated symbol :
BW
2SA2030
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
DC current transfer ratio
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
Min.
15
12
6
270
Typ. Max.
Unit
V
V
V
nA
Conditions
I
C
=
10
μ
A
I
C
=
1mA
I
E
=
10
μ
A
V
CB
=
15V
V
CE
=
2V / I
C
=
10mA
I
C
=
200mA / I
B
=
10mA
V
CE
=
2V, I
E
=
10mA, f
T
=
100MHz
V
CB
=
10V, I
E
=
0A, f
=
1MHz
100
680
Collector-emitter saturation voltage
Transition frequency
Output capacitance
V
CE (sat)
f
T
Cob
100
260
6.5
250
mV
MHz
pF
相關(guān)PDF資料
PDF描述
2SA2030 Low frequency transistor
2SA2125 PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications
2SC5964 PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications
2SA2126 PNP Epitaxial Planar Silicon Transistor DC / DC Converter Applications
2SA2153 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SA2018_1 制造商:ROHM 制造商全稱:Rohm 功能描述:Low frequency transistor
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2SA2018TL 功能描述:兩極晶體管 - BJT PNP 12V 0.5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SA202 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SA203
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