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參數資料
| 型號： | 2SA1958 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Epitaxial(外延PNP晶體管) |
| 中文描述： | 硅外延進步黨（外延進步黨晶體管） |
| 文件頁數： | 5/6頁 |
| 文件大小： | 36K |
| 代理商： | 2SA1958 |
2SA1958
5
Notice
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or
part of this document without Hitachiís permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or
any other reasons during operation of the userís unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachiís semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the examples
described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third
party or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachiís products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachiís sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachiís products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
相關PDF資料 |
PDF描述 |
|---|---|
| 2SA1960 | Silicon NPN Epitaxial |
| 2SA1964 | For Audio Amplifier Output Stages/TV Vｅｌｏｃｉｔｙ?。停铮洌酰欤幔簦椋铮?音頻放大器輸出極晶體管／電視速率調節(jié)晶體管) |
| 2SC5248 | For Audio Amplifier Output Stages/TV Vｅｌｏｃｉｔｙ?。停铮洌酰欤幔簦椋铮?音頻放大器輸出極晶體管／電視速率調節(jié)晶體管) |
| 2SA1965 | PNP Epitaxial Planar Silicon Transistor for Muting Circuit Applications(用于噪聲抑制電路的PNP硅外延平面型晶體管) |
| 2SA1967 | NPN Triple Diffused Planar Silicon Transistor for High-Voltage Amplifier,High-Voltage Switching Applications(用于高電壓放大器，高電壓轉換應用的NPN硅外延平面型晶體管) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SA19610QAHW | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA19620TU | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| 2SA1962-O | 功能描述:兩極晶體管 - BJT PNP 230V 15A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA1962-O(Q) | 功能描述:兩極晶體管 - BJT PNP 230V 15A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA1962-O(Q,T) | 功能描述:兩極晶體管 - BJT Transistor PNP 230V 15A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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