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參數(shù)資料
| 型號(hào)： | 2SA1714K |
| 廠(chǎng)商： | NEC Corp. |
| 英文描述： | PNP SILICON EPITAXIAL POWER TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING |
| 中文描述： | 進(jìn)步黨硅外延功率晶體管（達(dá)林頓連接筆記本高）高速開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 141K |
| 代理商： | 2SA1714K |
Document No. D16124EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTOR
2SA1714
PNP SILICON EPITAXIAL POWER TRANSISTOR
(DARLINGTON CONNECTION)
FOR HIGH-SPEED SWITCHING
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
The 2SA1714 is a high-speed darlington power transistor. This
transistor is ideal for high-precision control such as PWM control for
pulse mortors or blushless mortor of OA and FA equipment.
FEATURES
High DC current amplifiers due to darlington connection
Large current capacitance and low V
CE(sat)
TO-126 power transistor with high power dissipation
Complementary transistor with 2SC4342
QUALITY GRADES
Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to know
the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
100
V
Collector to emitter voltage
V
CEO
100
V
Emitter to base voltage
V
EBO
8.0
–3.0
V
Collector current (DC)
I
C(DC)
A
Collector current (pulse)
I
C(pulse)
*
–6.0
A
Base current (DC)
I
B(DC)
0.3
A
Total power dissipation
P
T
(Ta = 25
°
C)
1.3
W
Total power dissipation
P
T
(Tc = 25
°
C)
12
W
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55 to +150
°
C
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Emitter
2. Collector
3. Base
4. Fin (collector)
* PW
≤
10 ms, duty cycle
≤
50%
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| 2SA1721OTE85LF | 功能描述:TRANS PNP 300V 100MA TO236-3 制造商:toshiba semiconductor and storage 系列:- 包裝:剪切帶（CT） 零件狀態(tài):Digi-Key 停止供應(yīng) 晶體管類(lèi)型:PNP 電流 - 集電極（Ic）（最大值）:100mA 電壓 - 集射極擊穿（最大值）:300V 不同?Ib，Ic 時(shí)的?Vce 飽和值（最大值）:500mV @ 2mA，20mA 電流 - 集電極截止（最大值）:100nA（ICBO） 不同?Ic，Vce?時(shí)的 DC 電流增益（hFE）（最小值）:30 @ 20mA，10V 功率 - 最大值:150mW 頻率 - 躍遷:50MHz 工作溫度:150°C（TJ） 安裝類(lèi)型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商器件封裝:S-Mini 標(biāo)準(zhǔn)包裝:1 |
| 2SA1721RTE85LF | 功能描述:TRANS PNP 300V 100MA TO236-3 制造商:toshiba semiconductor and storage 系列:- 包裝:剪切帶（CT） 零件狀態(tài):Digi-Key 停止供應(yīng) 晶體管類(lèi)型:PNP 電流 - 集電極（Ic）（最大值）:100mA 電壓 - 集射極擊穿（最大值）:300V 不同?Ib，Ic 時(shí)的?Vce 飽和值（最大值）:500mV @ 2mA，20mA 電流 - 集電極截止（最大值）:100nA（ICBO） 不同?Ic，Vce?時(shí)的 DC 電流增益（hFE）（最小值）:30 @ 20mA，10V 功率 - 最大值:150mW 頻率 - 躍遷:50MHz 工作溫度:150°C（TJ） 安裝類(lèi)型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商器件封裝:S-Mini 標(biāo)準(zhǔn)包裝:1 |
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