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| 型號(hào)： | 2SA1709 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | PNP Epitaxial Planar Silicon Transistors for High-Voltage Switching Applications(用于高電壓轉(zhuǎn)換應(yīng)用的PNP硅外延平面型晶體管) |
| 中文描述： | 進(jìn)步黨硅外延平面晶體管的高壓開關(guān)應(yīng)用（用于高電壓轉(zhuǎn)換應(yīng)用的新進(jìn)步黨硅外延平面型晶體管） |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 153K |
| 代理商： | 2SA1709 |
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1709/2SC4489
High-Voltage Switching Applications
Ordering number:EN3096
83098HA (KT)/5169MO, TS No.3096–1/5
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Specifications
Absolute Maximum Ratings
at Ta = 25C
Package Dimensions
unit:mm
2064
[2SA1709/2SC4489]
Features
· Adoption of FBET, MBIT processes.
· High breakdown voltage, large current capacity.
· Fast switching speed.
Electrical Characteristics
at Ta = 25C
E : Emitter
C : Collector
B : Base
SANYO : NMP
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| 2SA1709S-AN | 功能描述:兩極晶體管 - BJT BIP PNP 2A 100V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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