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參數(shù)資料
| 型號： | 2SA1648-Z |
| 廠商： | NEC Corp. |
| 英文描述： | PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING |
| 中文描述： | 進(jìn)步黨硅外延的高晶體管高速開關(guān) |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 156K |
| 代理商： | 2SA1648-Z |
Data Sheet D16121EJ3V0DS
2
2SA1648,1648-Z
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector to emitter voltage
V
CEO(SUS)
I
C
=
3.0 A, I
B
=
0.3 A, L = 1 mH
60
V
Collector to emitter voltage
V
CEX(SUS)
I
C
=
3.0 A, I
B2
=
I
B1
=
0.3 A,
V
BE(OFF)
= 1.5 V, L = 180
μ
H, clamped
60
V
Collector cutoff current
I
CBO
V
CE
=
60 V, I
E
= 0 A
10
μ
A
Collector cutoff current
I
CER
V
CE
=
60 V, R
BE
= 50
, T
A
= 125
°
C
1.0
mA
Collector cutoff current
I
CEX1
V
CE
=
60 V, V
BE(OFF)
= 1.5 V
10
μ
A
Collector cutoff current
I
CEX2
V
CE
=
60 V, V
BE(OFF)
= 1.5 V,
T
A
= 125
°
C
1.0
mA
Emitter cutoff current
I
EBO
V
EB
=
5.0 V, I
C
= 0 A
10
μ
A
DC current gain
h
FE1
Note
V
CE
=
2.0 V, I
C
=
0.5 A
100
DC current gain
h
FE2
Note
V
CE
=
2.0 V, I
C
=
1.0 A
100
200
400
DC current gain
h
FE3
Note
V
CE
=
2.0 V, I
C
=
3.0 A
60
Collector saturation voltage
V
CE(sat)1
Note
I
C
=
3.0 A, I
B
=
0.15 A
0.3
V
Collector saturation voltage
V
CE(sat)2
Note
I
C
=
4.0 A, I
B
=
0.2 A
0.5
V
Base saturation voltage
V
BE(sat)1
Note
I
C
=
3.0 A, I
B
=
0.15 A
1.2
V
Base saturation voltage
V
BE(sat)2
Note
I
C
=
4.0 A, I
B
=
0.2 A
1.5
V
Collector capacitance
C
ob
V
CB
=
10 V, I
E
= 0 A, f = 1.0 MHz
80
pF
Gain bandwidth product
f
T
V
CE
=
10 V, I
C
= 0.5 A
90
MHz
Turn-on time
t
on
0.3
μ
s
Storage time
t
stg
1.5
μ
s
Fall time
t
f
I
C
=
3.0 A, R
L
= 17
,
I
B1
=
I
B2
=
0.15 A, V
CC
50 V
Refer to
SWITCHING TIME TEST
CIRCUIT
.
0.3
μ
s
Note
Pulse test PW
≤
350
μ
s, Duty Cycle
≤
2%/Pulsed
h
FE
CLASSIFICATION
Marking
M
L
K
h
FE2
100 to 200
150 to 300
200 to 400
SWITCHING TIME TEST CIRCUIT
Base current
waveform
Collector current
waveform
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