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參數(shù)資料
| 型號(hào)： | 2SA1648-Z |
| 廠商： | NEC Corp. |
| 英文描述： | PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING |
| 中文描述： | 進(jìn)步黨硅外延的高晶體管高速開關(guān) |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 156K |
| 代理商： | 2SA1648-Z |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16121EJ3V0DS00 (3rd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SA1648,1648-Z
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
c
2002
The mark shows major revised points.
The 2SA1648 is a mold power transistor developed for high-
speed switching and features a very low collector-to-emitter
saturation voltage.
This transistor is ideal for use in switching regulators, DC/DC
converters, motor drivers, solenoid drivers, and other low-voltage
power supply devices, as well as for high-current switching.
FEATURES
Available for high-current control in small dimension
Z type is a lead processed product and is deal for mounting a
hybrid IC.
Mold package that does not require an insulating board or
insulation bushing
Low collector saturation voltage:
V
CE(sat)1
=
0.3 V MAX. (I
C
=
3.0 A)
Fast switching speed:
t
f
= 0.3
μ
s MAX. (I
C
=
3.0 A)
High DC current gain and excellent linearity
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
100
V
Collector to emitter voltage
V
CEO
60
V
Emitter to base voltage
V
EBO
7.0
V
Collector current (DC)
I
C(DC)
5.0
A
Collector current (pulse)
I
C(pulse)
Note 1
10
A
Base current (DC)
I
B(DC)
2.5
A
Total power dissipation (Tc = 25
°
C)
P
T
18
W
Total power dissipation (Ta = 25
°
C)
P
T
1.0
Note 2
, 2.0
Note 3
W
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55 to +150
°
C
PACKAGE DRAWINGS (Unit: mm)
2
1
3
6.5 ±0.2
5.0 ±0.2
4
1
0
+
5
7
1
2.3
2.3
0
0.5 ±0.1
2.3 ±0.2
1
1.1 ±0.2
0.5
+0.2
0.5
+0.2
1
2
3
4
6.5±0.2
5.0±0.2
4
0
2.3 2.3
0.9
MAX.
5
1
2
M
1
0
+
2.3±0.2
0.5±0.1
0.8
MAX.
0.8
1
1
0
1.1±0.2
TO-252 (MP3Z)
ELECTRODE CONNECTION
1. Base
2. Collector
3. Emitter
4. Collector (Fin)
Notes 1.
PW
≤
300
μ
s, Duty Cycle
≤
10%
2.
Printing board mounted
3.
7.5 mm
2
×
0.7 mm ceramic board mounted
TO-251 (MP-3)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SA1648 | PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING |
| 2SA1667 | Silicon PNP Epitaxial Planar Transistor(硅PNP外延平面晶體管) |
| 2SA1668 | Silicon PNP Epitaxial Planar Transistor(硅PNP外延平面晶體管) |
| 2SA1670 | SILICON PNP EPITAXIAL PLANAR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1648-Z-AZ | 制造商:Renesas Electronics 功能描述:Trans GP BJT PNP 60V 5A 3-Pin(2+Tab) TO-252 Cut Tape 制造商:Renesas 功能描述:Trans GP BJT PNP 60V 5A 3-Pin(2+Tab) TO-252 |
| 2SA1648-Z-AZ(K) | 制造商:Renesas Electronics 功能描述:PNP |
| 2SA1648-Z-AZ(L) | 制造商:Renesas Electronics 功能描述:PNP |
| 2SA1649-AZ(K) | 制造商:Renesas Electronics 功能描述:PNP Bulk |
| 2SA1649-K(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
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