參數(shù)資料
型號: 2SA1647-ZL
廠商: NEC Corp.
英文描述: TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 5A I(C) | TO-252
中文描述: 晶體管|晶體管|進步黨| 100V的五(巴西)總裁| 5A條一(c)|至252
文件頁數(shù): 2/6頁
文件大?。?/td> 160K
代理商: 2SA1647-ZL
Data Sheet D14839EJ2V0DDS
2
2SA1647, 2SA1647-Z
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector to emitter voltage
V
CEO(SUS)
I
C
=
2.5 A, I
B
=
0.25 A, L = 1 mH
100
V
Collector to emitter voltage
V
CEX(SUS)
I
C
=
2.5 A, I
B1
=
I
B2
=
0.25 A,
V
BE(OFF)
= 1.5 V, L = 180
μ
H, clamped
100
V
Collector cutoff current
I
CBO
V
CB
=
100 V, I
E
= 0
10
μ
A
Collector cutoff current
I
CER
V
CE
=
100 V, R
BE
= 50
, T
A
= 125
°
C
1.0
mA
Collector cutoff current
I
CEX1
V
CE
=
100 V, V
BE(OFF)
= 1.5 V
10
μ
A
Collector cutoff current
I
CEX2
V
CE
=
100 V, V
BE(OFF)
= 1.5 V,
T
A
= 125
°
C
1.0
mA
Emitter cutoff current
I
EBO
V
EB(OFF)
=
5.0 V, I
C
= 0
10
μ
A
DC current gain
h
FE1
*
V
CE
=
2.0 V, I
C
=
0.5 A
100
DC current gain
h
FE2
*
V
CE
=
2.0 V, I
C
=
1.0 A
100
400
DC current gain
h
FE3
*
V
CE
=
2.0 V, I
C
=
3.0 A
60
Collector saturation voltage
V
CE(sat)1
*
I
C
=
3.0 A, I
B
=
0.15 A
0.3
V
Collector saturation voltage
V
CE(sat)2
*
I
C
=
4.0 A, I
B
=
0.2 A
0.5
V
Base saturation voltage
V
BE(sat)1
*
I
C
=
3.0 A, I
B
=
0.15 A
1.2
V
Base saturation voltage
V
BE(sat)2
*
I
C
=
4.0 A, I
B
=
0.2 A
1.5
V
Collector capacitance
C
ob
V
CB
=
10 V, I
E
= 0, f = 1.0 MHz
110
pF
Gain bandwidth product
f
T
V
CE
=
10 V, I
C
= 0.5 A
90
MHz
Turn-on time
t
on
0.3
μ
s
Storage time
t
stg
1.5
μ
s
Fall time
t
f
I
C
=
3.0 A, R
L
= 17
,
I
B1
=
I
B2
=
0.15 A, V
CC
50 V
Refer to the test circuit.
0.4
μ
s
* Pulse test PW
350
μ
s, duty cycle
2%/Pulsed
h
FE
CLASSIFICATION
Marking
M
L
K
h
FE2
100 to 200
150 to 300
200 to 400
SWITCHING TIME TEST CIRCUIT
Base current
waveform
Collector current
waveform
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