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參數(shù)資料
| 型號(hào)： | 2SA1646-ZL |
| 廠商： | NEC Corp. |
| 英文描述： | TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 10A I(C) | TO-263AB |
| 中文描述： | 晶體管|晶體管|進(jìn)步黨| 100V的五（巴西）總裁| 10A條一（c）|至263AB |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 139K |
| 代理商： | 2SA1646-ZL |
Data Sheet D16120EJ1V0DS
2
2SA1646, 2SA1646-Z
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
=
100 V, I
E
= 0
10
μ
A
Emitter cutoff current
I
EBO
V
EB
=
5 V, I
C
= 0
10
μ
A
DC current gain
h
FE1
*
V
CE
=
2 V, I
C
=
0.5 A
100
DC current gain
h
FE2
*
V
CE
=
2 V, I
C
=
2 A
100
400
DC current gain
h
FE3
*
V
CE
=
2 V, I
C
=
6 A
60
Collector saturation voltage
V
CE(sat)1
*
I
C
=
6 A, I
B
=
0.3 A
0.3
V
Collector saturation voltage
V
CE(sat)2
*
I
C
=
8 A, I
B
=
0.4 A
0.5
V
Base saturation voltage
V
BE(sat)1
*
I
C
=
6 A, I
B
=
0.3 A
1.2
V
Base saturation voltage
V
BE(sat)2
*
I
C
=
8 A, I
B
=
0.4 A
1.5
V
Gain bandwidth product
f
T
V
CE
=
10 V, I
C
=
0.5 A
150
MHz
Collector capacitance
C
ob
V
CB
=
10 V, I
E
= 0, f = 1 MHz
250
pF
Turn-on time
t
on
0.3
μ
s
Storage time
t
stg
1.5
μ
s
Fall time
t
f
I
C
=
6 A, I
B1
=
I
B2
=
0.3 A,
R
L
= 8.3
, V
CC
=
50 V
Refer to the test circuit.
0.4
μ
s
*
Pulse test PW
≤
350
μ
s, Duty Cycle
≤
2%
h
FE
CLASSIFICATION
Marking
M
L
K
h
FE2
100 to 200
150 to 300
200 to 400
SWITCHING TIME TEST CIRCUIT
Base current
waveform
Collector current
waveform
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| 2SA1647-K-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
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