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參數(shù)資料
| 型號： | 2SA1646-ZL |
| 廠商： | NEC Corp. |
| 英文描述： | TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 10A I(C) | TO-263AB |
| 中文描述： | 晶體管|晶體管|進(jìn)步黨| 100V的五（巴西）總裁| 10A條一（c）|至263AB |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 139K |
| 代理商： | 2SA1646-ZL |
Document No. D16120EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SA1646, 2SA1646-Z
PNP SILICON EPITAXIAL
TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
The 2SA1646 is a mold power transistor developed for high-
speed switching and features a very low collector-to-emitter
saturation voltage. This transistor is ideal for use in switching
power supplies, DC/DC converters, motor drivers, solenoid drivers,
and other low-voltage power supply devices, as well as for high-
current switching.
FEATURES
Mold package that does not require an insulating board or
insulation bushing
Fast switching speed
Low collector-to-emitter saturation voltage:
V
CE(sat)
=
0.3 V MAX. @I
C
=
6 A
QUALITY GRADES
Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to know
the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
V
CBO
150
V
Collector to emitter voltage
V
CEO
100
V
Emitter to base voltage
V
EBO
7.0
V
Collector current
I
D(DC)
10
A
Collector current
I
C(pulse)
PW
≤
300
μ
s,
duty cycle
≤
10%
20
A
Base current
I
B(DC)
6.0
A
Total power dissipation
P
T
Tc = 25
°
C
40
W
Total power dissipation
P
T
Ta = 25
°
C
1.5
W
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55 to +150
°
C
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SA1646 | PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING |
| 2SA1646-Z | PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING |
| 2SA1646-ZM | 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset |
| 2SA1647 | SILICON POWER TRANSISTOR |
| 2SA1647-Z | SILICON POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1647-K-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1647-K-Z(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1647-L-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1647-Z-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans GP BJT PNP 100V 5A 3-Pin(2+Tab) TO-252 |
| 2SA1647-Z-AZ-K | 制造商:Renesas Electronics 功能描述:PNP |
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