參數(shù)資料
型號: 2SA1645
廠商: NEC Corp.
英文描述: PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
中文描述: 進步黨硅外延的高晶體管高速開關(guān)
文件頁數(shù): 2/6頁
文件大小: 143K
代理商: 2SA1645
Data Sheet D15587EJ2V0DS
2
2SA1645, 2SA1645-Z
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
=
100 V, I
E
= 0
10
μ
A
Emitter cutoff current
I
EBO
V
EB
=
5 V, I
C
= 0
10
μ
A
DC current gain
h
FE1
*
V
CE
=
2 V, I
C
=
0.5 A
100
DC current gain
h
FE2
*
V
CE
=
2 V, I
C
=
1.5 A
100
400
DC current gain
h
FE3
*
V
CE
=
2 V, I
C
=
4 A
60
Collector saturation voltage
V
CE(sat)1
*
I
C
=
4 A, I
B
=
0.2 A
0.3
V
Collector saturation voltage
V
CE(sat)2
*
I
C
=
6 A, I
B
=
0.3 A
0.5
V
Base saturation voltage
V
BE(sat)1
*
I
C
=
4 A, I
B
=
0.2 A
1.2
V
Base saturation voltage
V
BE(sat)2
*
I
C
=
6 A, I
B
=
0.3 A
1.5
V
Gain bandwidth product
f
T
V
CE
=
10 V, I
C
=
1.5 A
150
MHz
Collector capacitance
C
ob
V
CB
=
10 V, I
E
= 0, f = 1 MHz
150
pF
Turn-on time
t
on
0.3
μ
s
Storage time
t
stg
1.5
μ
s
Fall time
t
f
I
C
=
4 A, I
B1
=
I
B2
=
0.2 A,
R
L
= 12.5
, V
CC
=
50 V
Refer to the test circuit.
0.4
μ
s
*
Pulse test PW
350
μ
s, duty cycle
2%
h
FE
CLASSIFICATION
Marking
M
L
K
h
FE2
100 to 200
150 to 300
200 to 400
SWITCHING TIME TEST CIRCUIT
Base current
waveform
Collector current
waveform
相關(guān)PDF資料
PDF描述
2SA1645-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
2SA1646K TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 10A I(C) | TO-220AB
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