參數(shù)資料
型號(hào): 2SA1645
廠商: NEC Corp.
英文描述: PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
中文描述: 進(jìn)步黨硅外延的高晶體管高速開(kāi)關(guān)
文件頁(yè)數(shù): 1/6頁(yè)
文件大?。?/td> 143K
代理商: 2SA1645
Document No. D15587EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SA1645, 2SA1645-Z
PNP SILICON EPITAXIAL
TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
The 2SA1645 is a mold power transistor developed for high-
speed switching and features a very low collector-to-emitter
saturation voltage. This transistor is ideal for use in switching
power supplies, DC/DC converters, motor drivers, solenoid drivers,
and other low-voltage power supply devices, as well as for high-
current switching.
FEATURES
Fast switching speed
Low collector-to-emitter saturation voltage:
V
CE(sat)
=
0.3 V MAX. @I
C
=
4 A
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
V
CBO
150
V
Collector to emitter
voltage
V
CEO
100
V
Emitter to base voltage
V
EBO
7.0
V
Collector current
I
D(DC)
7.0
A
Collector current
I
C(pulse)
PW
300
μ
s,
Duty Cycle
10%
14
A
Base current
I
B(DC)
3.5
A
Total power dissipation
P
T
Tc = 25
°
C
35
W
Total power dissipation
P
T
Ta = 25
°
C
1.5
W
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55 to
+150
°
C
PACKAGE DRAWING (UNIT: mm)
相關(guān)PDF資料
PDF描述
2SA1645-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
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