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| 型號(hào)： | 2SA1381-F |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | 0.1 A, 300 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 封裝： | TO-126, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 49K |
| 代理商： | 2SA1381-F |
92502AS (KT)/71598HA (KT)/3107KI/D134MW, TS No.1426-1/5
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
High-Definition CRT Display,
Video Output Applications
Ordering number:ENN1426C
2SA1381/2SC3503
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Electrical Characteristics at Ta = 25C
Package Dimensions
unit:mm
2009B
[2SA1381/2SC3503]
Features
High breakdown voltage : VCEO≥300V.
Small reverse transfer capacitance and excellent high
frequency characteristic
: Cre=1.8 pF (NPN), 2.3pF (PNP), VCB=30V.
Adoption of MBIT process.
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* : The 2SA1381/2SC3503 are classified by 10mA hFE as follows :
Continued on next page.
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1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126
( ) : 2SA1381
Specifications
Absolute Maximum Ratings at Ta = 25C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC3503 | 0.1 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 2SA1381 | 0.1 A, 300 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 2SC3503-D | 0.1 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 2SA1381 | 0.1 A, 300 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 2SC3503-F | 0.1 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-126 |
相關(guān)代理商/技術(shù)參數(shù) |
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| 2SA1381FSTU | 功能描述:兩極晶體管 - BJT PNP 300V 0.1A 7W RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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| 2SA1382,T6MIBF(J | 功能描述:TRANS PNP 2A 50V TO226-3 制造商:toshiba semiconductor and storage 系列:- 包裝:散裝 零件狀態(tài):停產(chǎn) 晶體管類型:PNP 電流 - 集電極（Ic）（最大值）:2A 電壓 - 集射極擊穿（最大值）:50V 不同?Ib，Ic 時(shí)的?Vce 飽和值（最大值）:500mV @ 33mA，1A 電流 - 集電極截止（最大值）:100nA（ICBO） 不同?Ic，Vce?時(shí)的 DC 電流增益（hFE）（最小值）:150 @ 500mA，2V 功率 - 最大值:900mW 頻率 - 躍遷:110MHz 工作溫度:150°C（TJ） 安裝類型:通孔 封裝/外殼:TO-226-3，TO-92-3 長體 供應(yīng)商器件封裝:TO-92MOD 標(biāo)準(zhǔn)包裝:1 |
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