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參數(shù)資料
| 型號(hào)： | 2SA1190-E |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件頁(yè)數(shù)： | 7/10頁(yè) |
| 文件大小： | 43K |
| 代理商： | 2SA1190-E |
2SA1190, 2SA1191
6
DC Current Transfer Ratio vs.
Collector Current
Collector Current IC (mA)
–1
–3
–10
–30
–100
10
30
100
300
1,000
DC
current
transfer
ratio
h
FE
Ta = 75
°C
25
–25
VCE = –12 V
Pulse
Collector to Emitter Saturation Voltage vs.
Collector Current
Collector Current IC (mA)
Collector
to
emitter
saturation
voltage
V
CE
(sat)
(V)
–1
–3
–10
–30
–100
–0.01
–0.03
–0.1
–0.3
–1.0
IC = 10 IB
Pulse
Ta = 75
°C
25
–25
Base to Emitter Saturation Voltage vs.
Collector Current
Collector Current IC (mA)
–1
–3
–10
–30
–100
Base
to
emitter
saturation
voltage
V
BE
(sat)
(V)
–0.1
–0.3
–1.0
–3
–10
IC = 10 IB
Pulse
Ta = –25
°C
25
75
Gain Bandwidth Product vs.
Collector Current
10
20
100
50
200
1,000
500
Collector Current IC (mA)
Gain
bandwidth
product
f
T
(MHz)
–0.5 –1.0
–2
–5
–10 –20
–50
VCE = –6 V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SA1191-E | SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1190DTZ-E | 100 mA, 90 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1191-E | SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1190-D | SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1190-D | SMALL SIGNAL TRANSISTOR, TO-92 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1190ETZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SA1191 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon PNP Epitaxial |
| 2SA1191D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SA1191E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SA1193 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon PNP Epitaxial, Darlington |
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