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參數(shù)資料
| 型號： | 2SA1190-E |
| 元件分類： | 小信號晶體管 |
| 英文描述： | SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 43K |
| 代理商： | 2SA1190-E |
2SA1190, 2SA1191
5
Collector Cutoff Current vs.
Collector to Base Voltage
Collector to Base Voltage VCB (V)
0
–20
–40
–60
–80
–100
Collector
cutoff
current
I
CBO
(pA)
–1
–10
–100
–1,000
–10.000
Ta = 75
°C
IE = 0
25
–25
Collector Cutoff Current vs.
Collector to Emitter Voltage
Collector to Emitter Voltage VCE (V)
0
–20
–40
–60
–80
–100
Collector
cutoff
current
I
CEO
(nA)
–0.1
–1.0
–10
–100
–1,000
Ta = 75
°C
25
–25
RBE = ∞
Emitter Cutoff Current vs.
Emitter to Base Voltage
Emitter to Base Voltage VEB (V)
0
–2–4–6–8
–10
Emitter
cutoff
current
I
EBO
(pA)
–0.1
–1.0
–10
–100
–1,000
Ta = 75
°C
25
–25
IC = 0
Collector to Emitter Breakdown Voltage vs.
Base to Emitter Resistance
Base to Emitter Resistance RBE ()
10
100
1 k
10 k
100 k
Collector
to
emitter
breakdown
voltage
V
(BR)
CER
(V)
–140
–150
–160
–170
–180
–190
Typical Value
IC = –1 mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SA1191-E | SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1190DTZ-E | 100 mA, 90 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1191-E | SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1190-D | SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1190-D | SMALL SIGNAL TRANSISTOR, TO-92 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1190ETZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SA1191 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon PNP Epitaxial |
| 2SA1191D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SA1191E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SA1193 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon PNP Epitaxial, Darlington |
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