參數(shù)資料
型號: 2SA1129
廠商: NEC Corp.
英文描述: PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
中文描述: 進步黨硅外延晶體管低頻功放和中高速開關
文件頁數(shù): 2/6頁
文件大小: 103K
代理商: 2SA1129
Data Sheet D14856EJ2V0DS
2
2SA1129
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
Parameter
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
t
on
t
stg
t
f
Conditions
MIN.
TYP.
MAX.
10
10
200
Unit
μ
A
μ
A
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
Collector saturation voltage
Collector saturation voltage
Base saturation voltage
Base saturation voltage
Turn-on time
Storage time
Fall time
Pulse test PW
350
μ
s, duty cycle
2%
V
CB
=
30 V, I
E
= 0 A
V
EB
=
5.0 V, I
C
= 0 A
V
CE
=
1.0 V, I
C
=
3.0 A
V
CE
=
1.0 V, I
C
=
5.0 A
I
C
=
3.0 A, I
B
=
0.1 A
I
C
=
5.0 A, I
B
=
0.5 A
I
C
=
3.0 A, I
B
=
0.1 A
I
C
=
5.0 A, I
B
=
0.5 A
I
C
=
5.0 A, R
L
= 4.0
,
I
B1
=
I
B2
=
0.5 A, V
CC
20 V
PW = 50
μ
s, duty cycle = 2%
Note
40
20
Note
Note
0.3
0.6
1.5
2.0
1.0
2.5
1.0
V
V
V
V
μ
s
μ
s
μ
s
Note
Note
Note
Note
h
FE
CLASSIFICATION
Marking
h
FE1
M
L
K
40 to 80
60 to 120
100 to 200
SWITCHING TIME (t
on
, t
stg
, t
f
) TEST CIRCUIT
Base current
waveform
Collector current
waveform
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相關代理商/技術參數(shù)
參數(shù)描述
2SA1129-AZ-L 制造商:Renesas Electronics 功能描述:Bulk
2SA1129K 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 7A I(C) | TO-220AB
2SA1129L 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 7A I(C) | TO-220AB
2SA1129-L(AZ) 制造商:Renesas Electronics Corporation 功能描述:
2SA1129M 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 7A I(C) | TO-220AB