參數(shù)資料
型號(hào): 2SA1129
廠商: NEC Corp.
英文描述: PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
中文描述: 進(jìn)步黨硅外延晶體管低頻功放和中高速開(kāi)關(guān)
文件頁(yè)數(shù): 1/6頁(yè)
文件大?。?/td> 103K
代理商: 2SA1129
Document No. D14856EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SA1129
PNP SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
The 2SA1129 is a mold power transistor developed for mid-speed
switching, and is ideal for use as a ramp driver.
FEATURES
Large current capacity with small package: I
C(DC)
=
7.0 A
Low collector saturation voltage:
V
CE(sat)
=
0.3 V MAX. @I
C
=
3.0 A, IB =
0.1 A
Complementary transistor: 2SC2654
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
Conditions
Ratings
30
30
7.0
7.0
15
Unit
V
V
V
A
A
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
PW
300
μ
s,
duty cycle
10%
Base current (DC)
Total power dissipation
I
B(DC)
P
T
3.5
40
1.5
150
A
W
W
°
C
°
C
T
C
= 25
°
C
T
A
= 25
°
C
Junction temperature
Storage temperature
T
j
T
stg
55 to +150
ORDERING INFORMATION
Part No.
2SA1129
Package
TO-220AB
(TO-220AB)
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SA1129-AZ-L 制造商:Renesas Electronics 功能描述:Bulk
2SA1129K 制造商:NEC 制造商全稱(chēng):NEC 功能描述:TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 7A I(C) | TO-220AB
2SA1129L 制造商:NEC 制造商全稱(chēng):NEC 功能描述:TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 7A I(C) | TO-220AB
2SA1129-L(AZ) 制造商:Renesas Electronics Corporation 功能描述:
2SA1129M 制造商:NEC 制造商全稱(chēng):NEC 功能描述:TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 7A I(C) | TO-220AB