參數(shù)資料
型號: 2SA1085
廠商: Hitachi,Ltd.
英文描述: Silicon PNP Epitaxial
中文描述: 硅外延進步黨
文件頁數(shù): 5/8頁
文件大小: 41K
代理商: 2SA1085
2SA1083, 2SA1084, 2SA1085
5
DC Current Transfer Ratio vs.
Collector Current
5,000
2,000
1,000
500
200
100
50
–0.1
–1.0
–10
–100
–3
–30
–0.3
Collector Current I
C
(mA)
D
F
V
CE
= –12 V
Pulse
Collector to Emitter Saturation
Voltage vs. Collector Current
–1.0
–0.5
–0.2
–0.1
–0.05
–0.02
–0.01
–1
–5
–2
–20
–100
–10
–50
Collector Current I
C
(mA)
C
V
C
I
C
= 10 I
B
Base to Emitter Saturation Voltage
vs. Collector Current
–10
–5
–2
–1.0
–0.5
–0.2
–0.1
–1
–5
–2
–20
–100
–10
–50
Collector Current I
C
(mA)
B
V
B
I
C
= 10 I
B
Gain Bandwidth Product vs.
Collector Current
2,000
1,000
500
200
100
50
20
–1
–5
–20
–100
–2
–10
–50
Collector Current I
C
(mA)
G
T
V
CE
= –12 V
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相關代理商/技術參數(shù)
參數(shù)描述
2SA1085D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 100MA I(C) | TO-92
2SA1085DTZ-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial
2SA1085E 制造商:Renesas Electronics Corporation 功能描述:PNP transistor,2SA1085 0.1A
2SA1085ETZ-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial
2SA1090 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 200MA I(C) | TO-18