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參數(shù)資料
| 型號： | 2SA1085 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Epitaxial |
| 中文描述： | 硅外延進步黨 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 41K |
| 代理商： | 2SA1085 |
2SA1083, 2SA1084, 2SA1085
3
Electrical Characteristics
(Ta = 25°C)
2SA1083
2SA1084
2SA1085
Item
Symbol Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
–60
—
—
–90
—
—
–120 —
—
V
I
C
= –10
μ
A, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
–60
—
—
–90
—
—
–120 —
—
V
I
C
= –1 mA,
R
BE
=
∞
Emitter to base
breakdown voltage
V
(BR)EBO
–5
—
—
–5
—
—
–5
—
—
V
I
E
= –10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
—
—
–0.1
—
—
–0.1
—
—
–0.1
μ
A
V
CB
= –50 V, I
E
= 0
Emitter cutoff current
I
EBO
—
—
–0.1
—
—
–0.1
—
—
–0.1
μ
A
V
EB
= –2 V, I
C
= 0
DC current transfer ratio h
FE
*
1
250
—
800
250
—
800
250
—
800
V
CE
= –12 V,
I
C
= –2 mA
Collector to emitter
saturation voltage
V
CE(sat)
—
—
–0.2
—
—
–0.2
—
—
–0.2
V
I
C
= –10 mA,
I
B
= –1 mA
Base to emitter voltage
V
BE
—
–0.6
—
—
–0.6 —
—
–0.6 —
V
V
CE
= –12 V,
I
C
= –2 mA
Gain bandwidth product f
T
—
90
—
—
90
—
—
90
—
MHz V
CE
= –12 V,
I
C
= –2 mA
Collector output
capacitance
Cob
—
3.5
—
—
3.5
—
—
3.5
—
pF
V
CB
= –10 V, I
E
= 0,
f = 1 MHz
Noise voltage reffered
to input
e
n
—
0.5
—
—
0.5
—
—
0.5
—
nV/
√
Hz
V
CE
= –6V,
I
C
= –10 mA,
f = 1 kHz,
R
g
= 0,
f = 1Hz
Note:
D
1. The 2SA1083, 2SA1084 and 2SA1085 are grouped by h
FE
as follows.
E
250 to 500
400 to 800
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1085D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SA1085DTZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SA1085E | 制造商:Renesas Electronics Corporation 功能描述:PNP transistor,2SA1085 0.1A |
| 2SA1085ETZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SA1090 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 200MA I(C) | TO-18 |
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