
2PB709AXL_1
NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 12 November 2008
3 of 9
NXP Semiconductors
2PB709ARL; 2PB709ASL
45 V, 100 mA PNP general-purpose transistors
5.
Limiting values
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6.
Thermal characteristics
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7.
Characteristics
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
V
CBO
collector-base voltage
V
CEO
collector-emitter voltage
V
EBO
emitter-base voltage
I
C
collector current
I
CM
peak collector current
Limiting values
Conditions
open emitter
open base
open collector
Min
-
-
-
-
-
Max
45
45
6
100
200
Unit
V
V
V
mA
mA
single pulse;
t
p
≤
1 ms
single pulse;
t
p
≤
1 ms
T
amb
≤
25
°
C
I
BM
peak base current
-
100
mA
P
tot
T
j
T
amb
T
stg
total power dissipation
junction temperature
ambient temperature
storage temperature
[1]
-
250
150
+150
+150
mW
°
C
°
C
°
C
-
55
65
Table 7.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction
to ambient
Conditions
in free air
Min
Typ
-
Max
500
Unit
K/W
[1]
-
Table 8.
T
amb
= 25
°
C unless otherwise specified.
Symbol
Parameter
I
CBO
collector-base cut-off
current
Characteristics
Conditions
V
CB
=
45 V; I
E
= 0 A
V
CB
=
45 V; I
E
= 0 A;
T
j
= 150
°
C
V
EB
=
5 V; I
C
= 0 A
Min
-
-
Typ
-
-
Max
10
5
Unit
nA
μ
A
I
EBO
emitter-base cut-off
current
DC current gain
h
FE
group R
h
FE
group S
collector-emitter
saturation voltage
-
-
10
nA
h
FE
V
CE
=
10 V; I
C
=
2 mA
210
290
-
-
-
340
460
500
V
CEsat
I
C
=
100 mA;
I
B
=
10 mA
[1]
-
mV