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  • 參數(shù)資料
    型號: 2PB709ARL
    廠商: NXP SEMICONDUCTORS
    元件分類: 小信號晶體管
    英文描述: 45 V, 100 mA PNP general-purpose transistors
    中文描述: 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
    封裝: PLASTIC PACKAGE-3
    文件頁數(shù): 1/9頁
    文件大小: 56K
    代理商: 2PB709ARL
    1.
    Product profile
    1.1 General description
    PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted
    Device (SMD) plastic package.
    [1]
    /DG: halogen-free
    1.2 Features
    I
    General-purpose transistors
    I
    Two current gain selections
    I
    AEC-Q101 qualified
    I
    Small SMD plastic package
    1.3 Applications
    I
    General-purpose switching and amplification
    1.4 Quick reference data
    2PB709ARL; 2PB709ASL
    45 V, 100 mA PNP general-purpose transistors
    Rev. 01 — 12 November 2008
    Product data sheet
    Table 1.
    Type number
    [1]
    Product overview
    Package
    NXP
    SOT23
    NPN complement
    JEDEC
    TO-236AB
    2PB709ARL
    2PB709ASL
    2PB709ARL/DG
    2PB709ASL/DG
    2PD601ARL
    2PD601ASL
    2PD601ARL/DG
    2PD601ASL/DG
    SOT23
    TO-236AB
    Table 2.
    Symbol
    V
    CEO
    I
    C
    h
    FE
    Quick reference data
    Parameter
    collector-emitter voltage
    collector current
    DC current gain
    Conditions
    open base
    Min
    -
    -
    Typ
    -
    -
    Max
    45
    100
    Unit
    V
    mA
    V
    CE
    =
    10 V;
    I
    C
    =
    2 mA
    h
    FE
    group R
    h
    FE
    group S
    210
    290
    -
    -
    340
    460
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    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
    2PB709ARL,215 功能描述:兩極晶體管 - BJT 45V 100MA PNP GEN-PURPOSE TRAN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
    2PB709ARL,235 功能描述:兩極晶體管 - BJT Trans GP BJT PNP 45V 0.1A 3-Pin RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
    2PB709ARL/DG 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:45 V, 100 mA PNP general-purpose transistors
    2PB709ARL215 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述:
    2PB709ART 制造商:NXP Semiconductors 功能描述:TRANS, PNP, 45V, 100MA, SOT23 制造商:NXP Semiconductors 功能描述:TRANS, PNP, 45V, 100MA, SOT23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Transition Frequency Typ ft:70MHz; Power Dissipation Pd:250mW; DC Collector Current:-100mA; DC Current Gain hFE:210; No. of Pins:3 ;RoHS Compliant: Yes