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參數(shù)資料
| 型號： | 2N7381 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | JFETs |
| 英文描述： | 9.4 A, 200 V, 0.49 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA |
| 封裝： | TO-257AA, 3 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 149K |
| 代理商： | 2N7381 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED N-CHANNEL MOSFET
Reference MIL-PRF-19500/614
T4-LDS-0124 Rev. 1 (091145)
Page 3 of 4
Single Event Effect (SEE) Characteristics:
Heavy Ion testing of the 2N7381 device was completed by similarity of die structure to the 2N7262. The
2N7262 has been characterized at the Texas A&M cyclotron. The following SOA curve has been established
using the elements, LET, range, and Total Energy conditions as shown:
2N7381 (2N7262)
0
20
40
60
80
100
120
140
160
180
200
220
-25
-20
-15
-10
-5
0
Gate Bias, V
D
rai
n
B
ias
,V
TAMU Ar
LET=8.3
Range =192um
Total Energy=531MeV
TAMU Kr
LET=27.8
Range =134um
Total Energy=1032MeV
TAMU Ag
LET=42.2
Range =119um
Total Energy=1289MeV
TAMU Au
LET=85.4
Range =118um
Total Energy=2247MeV
It should be noted that total energy levels are considered to be a factor in SEE characterization. Comparisons
to other datasets should not be based on LET alone. Please consult factory for more information.
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