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參數(shù)資料
| 型號(hào)： | 2N7381 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | JFETs |
| 英文描述： | 9.4 A, 200 V, 0.49 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA |
| 封裝： | TO-257AA, 3 PIN |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 149K |
| 代理商： | 2N7381 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED N-CHANNEL MOSFET
Reference MIL-PRF-19500/614
T4-LDS-0124 Rev. 1 (091145)
Page 2 of 4
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Gate Charge:
On-State Gate Charge
Gate to Source Charge
Gate to Drain Charge
VGS = 12V, ID = 9.4A
VDS = 100V
Qg(on)
Qgs
Qgd
50
10
25
nC
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Switching time tests:
Turn-on delay time
Rinse time
Turn-off delay time
Fall time
ID = 9.4A, VGS = 12Vdc,
Gate drive impedance = 7.5
Ω,
VDD = 100Vdc
td(on)
tr
td(off)
tf
25
50
70
60
ns
Diode Reverse Recovery Time
di/dt ≤ 100A/s, VDD ≤ 30V,
IF = 9.4A
trr
460
ns
POST-IRRADIATION ELECTRICAL CHARACTERISTICS (3) (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Drain-Source Breakdown Voltage
VGS = 0V, ID = 1mAdc
V(BR)DSS
200
Vdc
Gate-Source Voltage (Threshold)
VDS ≥ VGS, ID = 1.0mA MSR
VDS ≥ VGS, ID = 1.0mA MSF
VGS(th)1
2.0
1.25
4.0
4.5
Vdc
Gate Current
VGS = ±20V, VDS = 0V
IGSS1
±100
nAdc
Drain Current
VGS = 0V, VDS = 160V MSR
VGS = 0V, VDS = 160V MSF
IDSS1
25
50
Adc
Static Drain-Source On-State Voltage
VGS = 12V, ID = 6.0A pulsed MSR
VGS = 12V, ID = 6.0A pulsed MSF
VDS(on)
2.4
3.18
Vdc
Diode Forward Voltage
VGS = 0V, ID = 9.4A pulsed
VSD
1.4
Vdc
NOTE:
(3) Post-Irradiation Electrical Characteristics apply to devices subjected to Steady State Total Dose Irradiation testing in
accordance with MIL-STD-750 Method 1019. Separate samples are tested for VGS bias (12V), and VDS bias
(160V) conditions.
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