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參數(shù)資料
| 型號： | 2N7002W |
| 廠商： | Diodes Inc. |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 中文描述： | N溝道增強型場效應管 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 68K |
| 代理商： | 2N7002W |
D
S
30099 Rev. 4P-1
2 of 3
2N7002W
Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
BV
DSS
60
70
V
V
GS
= 0V, I
D
= 10 A
Zero Gate Voltage Drain Current
@ T
C
= 25°C
@ T
C
= 125°C
I
DSS
1.0
500
±10
μA
V
DS
= 60V, V
GS
= 0V
Gate-Body Leakage
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
I
GSS
nA
V
GS
= ±20V, V
DS
= 0V
V
GS(th)
1.0
2.0
V
V
DS
= V
GS
, I
D
=-250 A
V
GS
= 5.0V, I
D
= 0.05A
V
GS
= 10V, I
D
= 0.5A
V
GS
= 10V, V
DS
= 7.5V
V
DS
=10V, I
D
= 0.2A
Static Drain-Source On-Resistance
@ T
j
= 25°C
@ T
j
= 125°C
R
DS (ON)
3.2
4.4
7.5
13.5
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
I
D(ON)
g
FS
0.5
80
1.0
A
mS
C
iss
C
oss
C
rss
22
11
2.0
50
25
5.0
pF
pF
pF
V
= 25V, V
GS
= 0V
f = 1.0MHz
t
D(ON)
7.0
20
ns
V
DD
= 30V, I
D
= 0.2A,
R
L
= 150 , V
GEN
= 10V,
R
GEN
= 25
Turn-Off Delay Time
t
D(OFF)
11
20
ns
Note: 1. Valid provided that terminals are kept at specified ambient temperature.
2. Pulse width
300 s, duty cycle
2%.
N
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7002W _R1 _00001 | 制造商:PanJit Touch Screens 功能描述: |
| 2N7002W_ R2 _00001 | 制造商:PanJit Touch Screens 功能描述: |
| 2N7002W_05 | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 2N7002W_07 | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:60V N-Channel Enhancement Mode MOSFET |
| 2N7002W_08 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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