參數(shù)資料
型號: 2N7002W
廠商: Diodes Inc.
英文描述: N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
中文描述: N溝道增強型場效應(yīng)管
文件頁數(shù): 1/3頁
文件大?。?/td> 68K
代理商: 2N7002W
D
S
30099 Rev. 4P-1
1 of 3
2N7002W
2N7002W
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Characteristic
Symbol
2N7002W
Units
Drain-Source Voltage
V
DSS
60
V
Drain-Gate Voltage R
GS
1.0M
V
DGR
60
V
Gate-Source Voltage
Continuous
Pulsed
V
GSS
±20
±40
V
Drain Current (Note 1)
Continuous
Continuous @ 100°C
Pulsed
I
D
115
73
800
mA
Total Power Dissipation (Note 1)
Derating above T
A
= 25°C
P
d
200
1.60
mW
mW/°C
Thermal Resistance, Junction to Ambient
R
JA
625
K/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
°C
Note: 1. Valid provided that terminals are kept at specified ambient temperature.
2. Pulse width
300 s, duty cycle
2%.
A
E
J
L
M
B
C
H
G
D
K
TOP VIEW
D
S
G
Mechanical Data
Case: SOT-323, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking: K72
Weight: 0.006 grams (approx.)
SOT-323
Min
Dim
A
B
C
D
E
G
H
J
K
L
M
All Dimensions in mm
Max
0.30
0.40
1.15
1.35
2.00
2.20
0.65 Nominal
0.30
0.40
1.20
1.40
1.80
2.20
0.0
0.10
0.90
1.00
0.25
0.40
0.10
0.25
N
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