參數(shù)資料
型號(hào): 2N7002TRL13
廠(chǎng)商: NXP SEMICONDUCTORS
元件分類(lèi): 小信號(hào)晶體管
英文描述: 180 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
文件頁(yè)數(shù): 7/12頁(yè)
文件大?。?/td> 76K
代理商: 2N7002TRL13
April 1995
4
Philips Semiconductors
Product specication
N-channel vertical D-MOS transistor
2N7002
CHARACTERISTICS
Tj = 25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
V(BR)DSS
drain-source breakdown voltage
ID = 10 A
VGS =0
60
90
V
IDSS
drain-source leakage current
VDS = 48 V
VGS =0
1
A
±IGSS
gate-source leakage current
VDS = 0
±VGS = 15 V
10
nA
VGS(th)
gate-source threshold voltage
ID = 1 mA
VGS =VDS
0.8
3V
RDS(on)
drain-source on-resistance
ID = 500 mA
VGS = 10 V
3.5
5
ID = 75 mA
VGS = 4.5 V
5.3
Y
fs
transfer admittance
ID = 200 mA
VDS = 10 V
100
200
mS
Ciss
input capacitance
VDS = 10 V
VGS =0
f = 1 MHz
25
40
pF
Coss
output capacitance
VDS = 10 V
VGS =0
f = 1 MHz
22
30
pF
Crss
feedback capacitance
VDS = 10 V
VGS =0
f = 1 MHz
610
pF
Switching times (see Figs 2 and 3)
ton
turn-on time
ID = 200 mA
VDD =50V
VGS = 0 to 10 V
10
ns
toff
turn-off time
ID = 200 mA
VDD =50V
VGS = 0 to 10 V
15
ns
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