參數(shù)資料
型號： 2N7002TRL13
廠商： NXP SEMICONDUCTORS
元件分類： 小信號晶體管
英文描述： 180 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
文件頁數(shù)： 5/12頁
文件大?。?/td> 76K
代理商： 2N7002TRL13
April 1995
2
Philips Semiconductors
Product specication
N-channel vertical D-MOS transistor
2N7002
FEATURES
Direct interface to C-MOS, TTL,
etc.
High-speed switching
No secondary breakdown.
DESCRIPTION
N-channel enhancement mode
vertical D-MOS transistor in a SOT23
envelope. It is designed for use as a
Surface Mounted Device (SMD) in
thin and thick-film circuits, with
applications in relay, high-speed and
line transformer drivers.
PINNING - SOT23
PIN
DESCRIPTION
1
gate
2
source
3
drain
QUICK REFERENCE DATA
PIN CONFIGURATION
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
VDS
drain-source voltage
60
V
ID
drain current
DC value
180
mA
RDS(on)
drain-source on-resistance
ID = 500 mA
VGS = 10 V
5
VGS(th)
gate-source threshold
voltage
ID = 1 mA
VGS =VDS
3V
Fig.1 Simplified outline and symbol.
Marking code: 702
ook, halfpage
MSB003
Top view
12
3
handbook, 2 columns
s
d
g
MBB076 - 1
相關(guān)PDF資料
PDF描述
2N7221 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
2N7236R1 18 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
2N7221R1 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
2N7237 11 A, 200 V, 0.51 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
2N6800SM 3 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N7002T-TP 制造商:Micro Commercial Components (MCC) 功能描述:Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-523 T/R
2N7002V 功能描述:MOSFET N-Chan Enhancement Mode Field Effect RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2N7002V_1 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
2N7002V_10 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor
2N7002V-7 功能描述:MOSFET 60V 150mW RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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