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參數(shù)資料
| 型號(hào)： | 2N7002T |
| 廠商： | Diodes Inc. |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 中文描述： | N溝道增強(qiáng)型場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 85K |
| 代理商： | 2N7002T |
DS30301 Rev. 2 - 2
2 of 3
2N7002T
www.diodes.com
Electrical Chacteristics
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 1)
Drain-Source Breakdown Voltage
BV
DSS
60
V
V
GS
= 0V, I
D
= 10 A
Zero Gate Voltage Drain Current
@ T
C
= 25°C
@ T
C
= 125°C
I
DSS
1.0
500
±10
μA
V
DS
= 60V, V
GS
= 0V
Gate-Body Leakage
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
I
GSS
nA
V
GS
= ±20V, V
DS
= 0V
V
GS(th)
1.0
2.0
V
V
DS
= V
GS
, I
D
=-250 A
V
GS
= 5.0V, I
D
= 0.05A
V
GS
= 10V, I
D
= 0.5A
V
GS
= 10V, V
DS
= 7.5V
V
DS
=10V, I
D
= 0.2A
Static Drain-Source On-Resistance
@ T
j
= 25°C
@ T
j
= 125°C
R
DS (ON)
2.0
4.4
7.5
13.5
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
I
D(ON)
g
FS
0.5
80
1.0
A
mS
C
iss
C
oss
C
rss
22
11
2.0
50
25
5.0
pF
pF
pF
V
= 25V, V
GS
= 0V
f = 1.0MHz
t
D(ON)
7.0
20
ns
V
DD
= 30V, I
D
= 0.2A,
R
L
= 150 , V
GEN
= 10V,
R
GEN
= 25
Turn-Off Delay Time
t
D(OFF)
11
20
ns
Note: 1. Short duration test pulse used to minimize self-heating effect.
T
C
U
D
O
R
P
W
E
N
0
0.2
0.1
0.4
0.3
0.5
0.6
0.7
0.8
0.9
1
0
1
2
3
4
5
I
D
V
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
DS
V
= 10,7,6V
GS
V
= 5V
GS
V
= 4V
GS
V
= 3V
GS
0.6
1
1.4
1.8
0
0.2
R
,
D
D
I , DRAIN-SOURCE CURRENT (A)
Fig. 2 On-Resistance Variation with Gate Voltage and Drain-Source Current
V
= 3V
GS
V
= 4V
GS
V
= 5, 6, 7, 10V
GS
2.2
0.4
0.6
0.8
1.0
0.7
0.8
0.9
1.1
1
1.2
-50
-25
0
25
50
75
100
125
150
V
,
G
T , JUNCTION TEMPERATURE (
°
C)
Fig. 3 Gate Threshold Variation with Temperature
0.4
0.8
0.6
1.2
1.8
1.6
1.4
1
2.2
2
-50
-25
0
25
50
75
100
125
150
R
,
D
T , JUNCTION TEMPERATURE (
°
C)
Fig. 4 On-Resistance Variation with Temperature
V
I = 500mA
= 10V
GS
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7002T T/R | 功能描述:MOSFET TAPE7 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7002T,215 | 功能描述:MOSFET TAPE7 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7002T/R | 制造商:NXP Semiconductors 功能描述:MOSFET Transistor, N-Channel, TO-236AB |
| 2N7002T_09 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 2N7002T_1 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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