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參數(shù)資料
| 型號： | 2N7002E-7-F |
| 廠商： | DIODES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 中文描述： | 240 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | GREEN PACKAGE-3 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 416K |
| 代理商： | 2N7002E-7-F |
DS30376 Rev. 5 - 2
3 of 4
2N7002E
www.diodes.com
0
0.2
0.4
0.6
0.8
1.0
0
1
2
3
4
5
I , DRAIN-SOURCE CURRENT (A)
D
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 1 On-Region Characteristics
V
= 10V
GS
9.0V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.1V
5.5V
10V
5.0V
2.1V
0
V
, GATE TO SOURCE VOLTAGE (V)
GS
Fig. 2 Drain Current vs. Gate-Source Voltage
0.4
0.8
1.2
1.6
2.0
0
1
2
3
4
5
6
7
I , DRAIN CURRENT (A)
D
T = -55°C
A
T = 125°C
A
T = 25°C
A
0
1
2
3
4
5
0
2
4
6
8
10
R
- DRAIN-SOURCE-ON-RESISTANCE (
W
)
DS(ON),
V
- GATE TO SOURCE VOLTAGE (V)
GS
Fig. 3 On Resistance vs.
Gate to Source Voltage
I = 75mA
D
I = 250mA
D
C
U
D
O
R
P
W
E
N
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1.0
R
DRAIN-SOURCE-ON-RESISTANCE (
W
)
DS(ON),
I , DRAIN CURRENT (A)
D
Fig. 4 On Resistance vs.
Drain Current
V
= 4.5V
GS
V
= 10V
GS
0
T , JUNCTION TEMPERATURE (°C)
J
Fig. 5 On-Resistance vs. Junction Temperature
V
= 4.5V @ 200mA
GS
1
2
3
4
5
-75
-50
-25
0
25
50
75
100 125
150
R
, DRAIN-SOURCE
DS(ON)
ON-RESISTANCE ( )
W
V
= 10V @ 250mA
GS
0
50
100
25
50
75
100
125
150
175
200
P , POWER DISSIPATION (mW)
D
T , AMBIENT TEMPERATURE (°C)
A
Fig. 6, Max Power Dissipation vs
Ambient Temperature
150
200
250
300
350
0
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7002E8/10K | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 115MA I(D) | TO-236AB |
| 2N7002E9/3K | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 115MA I(D) | TO-236AB |
| 2N7002E-E3 | 制造商:Vishay Siliconix 功能描述:SS MOS LEAD FREE - Bulk |
| 2N7002ELT1 | 制造商:WILLAS 制造商全稱:WILLAS 功能描述:310 mAmps, 60 Volts |
| 2N7002EPT | 制造商:CHENMKO 制造商全稱:Chenmko Enterprise Co. Ltd. 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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