- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄370045 > 2N7002E-7-F (DIODES INC) N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR PDF資料下載
參數(shù)資料
| 型號(hào)： | 2N7002E-7-F |
| 廠(chǎng)商： | DIODES INC |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 中文描述： | 240 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | GREEN PACKAGE-3 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 416K |
| 代理商： | 2N7002E-7-F |
DS30376 Rev. 5 - 2
2 of 4
2N7002E
www.diodes.com
Electrical Characteristics
@ T
A
= 25
°
C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
60
70
V
V
GS
= 0V, I
D
= 10
m
A
@ T
C
= 25°C
@ T
C
= 125°C
I
DSS
1.0
500
±10
μA
V
DS
= 60V, V
GS
= 0V
Gate-Body Leakage
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
I
GSS
nA
V
GS
= ±15V, V
DS
= 0V
V
GS(th)
1.0
2.5
3
4
V
V
DS
= V
GS
, I
D
= 250
m
A
V
GS
= 10V, I
D
= 250mA
V
GS
= 4.5V, I
D
= 200mA
V
GS
= 10V, V
DS
= 7.5V
V
DS
=10V, I
D
= 0.2A
Static Drain-Source On-Resistance
@ T
j
= 25°C
R
DS (ON)
1.6
2.0
1.0
W
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
I
D(ON)
g
FS
0.8
80
A
mS
C
iss
C
oss
C
rss
22
11
2.0
50
25
5.0
pF
pF
pF
V
= 25V, V
GS
= 0V
f = 1.0MHz
t
D(ON)
7.0
20
ns
V
DD
= 30V, I
D
= 0.2A,
R
L
= 150
W
, V
GEN
= 10V,
R
GEN
= 25
W
Turn-Off Delay Time
t
D(OFF)
11
20
ns
C
U
D
O
R
P
W
E
N
Date Code Key
K7B = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: P = 2003
M = Month ex: 9 = September
K7B
YM
Marking Information
Ordering Information
(Note 4)
Notes:
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
3. Short duration test pulse used to minimize self-heating effect.
Device
2N7002E-7-F
Packaging
SOT-23
Shipping
3000/Tape & Reel
Month
Code
Jan
1
Feb
2
March
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
Year
Code
2003
P
2004
R
2005
S
2006
T
2007
U
2008
V
2009
W
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N7002K-7 | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 2N7002K | N-Ch; 60V (DS) MOSFET; add ESD protect function |
| 2N7002M | MOSFET( N-Channel ) |
| 2N7002T-7-F | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 2N7002T | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7002E8/10K | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 115MA I(D) | TO-236AB |
| 2N7002E9/3K | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 115MA I(D) | TO-236AB |
| 2N7002E-E3 | 制造商:Vishay Siliconix 功能描述:SS MOS LEAD FREE - Bulk |
| 2N7002ELT1 | 制造商:WILLAS 制造商全稱(chēng):WILLAS 功能描述:310 mAmps, 60 Volts |
| 2N7002EPT | 制造商:CHENMKO 制造商全稱(chēng):Chenmko Enterprise Co. Ltd. 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。