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參數(shù)資料
| 型號(hào)： | 2N7002-T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 9/13頁 |
| 文件大?。?/td> | 153K |
| 代理商： | 2N7002-T |
2N7002
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 7 — 8 September 2011
5 of 13
NXP Semiconductors
2N7002
60 V, 300 mA N-channel Trench MOSFET
7.
Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID =10A; VGS =0V; Tj = 25 °C
60
--V
ID =10A; VGS =0V; Tj = -55 °C
55
-
V
VGSth
gate-source threshold
voltage
ID =0.25mA; VDS =VGS; Tj =25°C;
122.5
V
ID =0.25mA; VDS =VGS; Tj =150 °C;
0.6
--V
ID =0.25mA; VDS =VGS; Tj =-55 °C;
--2.75
V
IDSS
drain leakage current
VDS =48V; VGS =0V; Tj = 25 °C
-
0.01
1
A
VDS =48V; VGS =0V; Tj = 150 °C
--10
A
IGSS
gate leakage current
VGS =15V; VDS =0V; Tj = 25 °C
-
10
100
nA
VGS =-15 V; VDS =0V; Tj = 25 °C
-
10
100
nA
RDSon
drain-source on-state
resistance
VGS =10V; ID =500 mA; Tj =25°C;
-2.8
5
VGS =10V; ID =500 mA; Tj = 150 °C;
--9.25
-3.8
5.3
Dynamic characteristics
Ciss
input capacitance
VDS =10V; f=1MHz; VGS =0V;
Tj =25°C
-
3150pF
Coss
output capacitance
-
6.8
30
pF
Crss
reverse transfer
capacitance
-
3.5
10
pF
ton
turn-on time
VGS =10V; VDS =50V; RL = 250 ;
RG(ext) =50 ; RGS =50
-
2.5
10
ns
toff
turn-off time
-
11
15
ns
Source-drain diode
VSD
source-drain voltage
-
0.85
1.5
V
Qr
recovered charge
VGS =0V; IS = 300 mA;
dIS/dt = -100 A/s
-30
-nC
trr
reverse recovery time
-
30
-
ns
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| 2N7221R1 | 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 2N7237 | 11 A, 200 V, 0.51 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7002T T/R | 功能描述:MOSFET TAPE7 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7002T,215 | 功能描述:MOSFET TAPE7 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7002T/R | 制造商:NXP Semiconductors 功能描述:MOSFET Transistor, N-Channel, TO-236AB |
| 2N7002T_09 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 2N7002T_1 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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