參數(shù)資料
型號: 2N7002-T
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
封裝: PLASTIC PACKAGE-3
文件頁數(shù): 6/13頁
文件大?。?/td> 153K
代理商: 2N7002-T
2N7002
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 7 — 8 September 2011
2 of 13
NXP Semiconductors
2N7002
60 V, 300 mA N-channel Trench MOSFET
3.
Ordering information
4.
Marking
[1]
% = placeholder for manufacturing site code
5.
Limiting values
Table 3.
Ordering information
Type number
Package
Name
Description
Version
2N7002
TO-236AB
plastic surface-mounted package; 3 leads
SOT23
Table 4.
Marking codes
Type number
Marking code[1]
2N7002
12%
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
25 °C
≤ Tj ≤ 150 °C
-
60
V
VDGR
drain-gate voltage
25 °C
≤ Tj ≤ 150 °C; RGS =20 k
-60
V
VGS
gate-source voltage
-30
30
V
VGSM
peak gate-source voltage
pulsed; tp ≤ 50 s; δ = 0.25
-40
40
V
ID
drain current
VGS =10V; Tsp =25 °C; see Figure 1;
-
300
mA
VGS =10V; Tsp = 100 °C; see Figure 1
-
190
mA
IDM
peak drain current
pulsed; tp ≤ 10 s; Tsp =25 °C; see
-1.2
A
Ptot
total power dissipation
Tsp =25 °C; see Figure 2
-0.83
W
Tj
junction temperature
-65
150
°C
Tstg
storage temperature
-65
150
°C
Source-drain diode
IS
source current
Tsp = 25 °C
-
300
mA
ISM
peak source current
pulsed; tp ≤ 10 s; Tsp =25 °C
-
1.2
A
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