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參數(shù)資料
| 型號： | 2N7000TA |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Advanced Small Signal MOSFET |
| 中文描述： | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | TO-92, 3 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 85K |
| 代理商： | 2N7000TA |
N-CHANNEL
Small Signal MOSFET
Electrical Characteristics
(T
C
=25
℃
unless otherwise specified)
Drain-Source Breakdown Voltage
Characteristic
Symbol
BV
DSS
Max. Units
Typ.
Min.
Test Condition
Static Drain-Source
On-State Resistance
②
Forward Transconductance
②
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
R
DS(on)
I
GSS
I
DSS
V
nA
μ
A
pF
ns
--
0.1
--
--
--
--
--
--
--
--
V
GS
=0V,I
D
=250
μ
A
V
DS
= V
GS
,I
D
=250
μ
A
V
DS
= V
GS
,I
D
=1mA
V
GS
=15V
V
GS
=-15V
V
DS
=60V
V
DS
=45V,T
C
=125
℃
V
GS
=10V,I
D
=0.5A
V
DS
=15V,I
D
=0.5A
V
DD
=30V,I
D
=0.5A,
R
G
=15
②③
Drain-to-Source Leakage Current
V
GS
=0V,V
DS
=25V,
f =1MHz
2N7000BU/2N7000TA
60
0.3
0.4
--
--
--
--
--
--
--
--
--
--
--
12
3.0
--
--
--
--
--
3.9
2.2
100
-100
1
1000
5.0
--
--
--
--
10
10
10
10
0.3
30
Notes ;
①
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
②
Pulse Test : Pulse Width = 250
μ
s, Duty Cycle
≤
2%
③
Essentially Independent of Operating Temperature
S
V
GS(th)
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Gate Threshold Voltage
V
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2N7000-TR1 | 制造商:Vishay Siliconix 功能描述:MOSFET Transistor, N-Channel, TO-92VAR |
| 2N7000-TR7 | 制造商:Vishay Intertechnologies 功能描述:TO226 VNDS06 |
| 2N7000TRI | 制造商:SILICONIX 功能描述:2N7000 FORMED LEADS |
| 2N7000-TRI | 制造商:SILICONIX 功能描述:2N7000 FORMED LEADS |
| 2N7000Z | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:115m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET |
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