- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄30468 > 2N7000RLRE (ON SEMICONDUCTOR) 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 PDF資料下載
參數(shù)資料
| 型號(hào)： | 2N7000RLRE |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | PLASTIC, TO-226AA, 3 PIN |
| 文件頁(yè)數(shù)： | 12/33頁(yè) |
| 文件大?。?/td> | 310K |
| 代理商： | 2N7000RLRE |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)當(dāng)前第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)
2N7000
4–4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS(1) (continued)
On–State Drain Current
(VGS = 4.5 Vdc, VDS = 10 Vdc)
Id(on)
75
—
mAdc
Forward Transconductance
(VDS = 10 Vdc, ID = 200 mAdc)
gfs
100
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 V V
0
Ciss
—
60
pF
Output Capacitance
(VDS = 25 V, VGS = 0,
f = 1.0 MHz)
Coss
—
25
Reverse Transfer Capacitance
f
1.0 MHz)
Crss
—
5.0
SWITCHING CHARACTERISTICS(1)
Turn–On Delay Time
(VDD = 15 V, ID = 500 mA,
ton
—
10
ns
Turn–Off Delay Time
( DD
D
Rgen = 25 ohms, RL = 25 ohms)
toff
—
10
1. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2.0%.
I D
,DRAIN
CURRENT
(AMPS)
r DS(on)
,ST
A
TIC
DRAIN–SOURCE
ON–RESIST
ANCE
(NORMALIZED)
V
GS(th)
,THRESHOLD
VOL
TAGE
(NORMALIZED)
I D
,DRAIN
CURRENT
(AMPS)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
VDS, DRAIN SOURCE VOLTAGE (VOLTS)
Figure 1. Ohmic Region
1.0
0.8
0.6
0.4
0.2
10
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
VGS, GATE SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1.2
1.05
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
– 60
– 20
+ 20
+ 60
+ 100
+ 140
– 60
– 20
+ 20
+ 60
+ 100
+ 140
T, TEMPERATURE (
°C)
Figure 3. Temperature versus Static
Drain–Source On–Resistance
T, TEMPERATURE (
°C)
Figure 4. Temperature versus Gate
Threshold Voltage
TA = 25°C
VGS = 10 V
9 V
8 V
7 V
6 V
4 V
3 V
5 V
VDS = 10 V
–55
°C
25
°C
125
°C
VGS = 10 V
ID = 200 mA
VDS = VGS
ID = 1.0 mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N7000RL1 | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 2N7000TAD75Z | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 2N7000BUJ18Z | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2N7000TAJ05Z | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2N7000BUD74Z | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7000RLRM | 功能描述:MOSFET 60V 200mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7000RLRMG | 功能描述:MOSFET 60V 200mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7000RLRP | 功能描述:MOSFET 60V 200mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7000RLRPG | 功能描述:MOSFET 60V 200mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7000T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 200MA I(D) | TO-92VAR |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。