參數(shù)資料
型號(hào)： 2N7000J05Z
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： TO-92, 3 PIN
文件頁(yè)數(shù)： 7/14頁(yè)
文件大?。?/td> 746K
代理商： 2N7000J05Z
Electrical Characteristics T
A = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Typ
e
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS = 0 V, ID = 10 A
All
60
V
I
DSS
Zero Gate Voltage Drain Current
V
DS = 48 V, VGS = 0 V
2N7000
1
A
T
J=125°C
1
mA
V
DS = 60 V, VGS = 0 V
2N7002
NDS7002A
1
A
T
J=125°C
0.5
mA
I
GSSF
Gate - Body Leakage, Forward
V
GS = 15 V, VDS = 0 V
2N7000
10
nA
V
GS = 20 V, VDS = 0 V
2N7002
NDS7002A
100
nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS = -15 V, VDS = 0 V
2N7000
-10
nA
V
GS = -20 V, VDS = 0 V
2N7002
NDS7002A
-100
nA
ON CHARACTERISTICS (Note 1)
V
GS(th)
Gate Threshold Voltage
V
DS = VGS, ID = 1 mA
2N7000
0.8
2.1
3
V
DS = VGS, ID = 250 A
2N7002
NDS7002A
1
2.1
2.5
R
DS(ON)
Static Drain-Source On-Resistance V
GS = 10 V, ID = 500 mA
2N7000
1.2
5
T
J =125°C
1.9
9
V
GS = 4.5 V, ID = 75 mA
1.8
5.3
V
GS = 10 V, ID = 500 mA
2N7002
1.2
7.5
T
J =100°C
1.7
13.5
V
GS = 5.0 V, ID = 50 mA
1.7
7.5
T
J =100C
2.4
13.5
V
GS = 10 V, ID = 500 mA
NDS7002
A
1.2
2
T
J =125°C
2
3.5
V
GS = 5.0 V, ID = 50 mA
1.7
3
T
J =125°C
2.8
5
V
DS(ON)
Drain-Source On-Voltage
V
GS = 10 V,
I
D = 500 mA
2N7000
0.6
2.5
V
GS = 4.5 V,
I
D = 75 mA
0.14
0.4
V
GS = 10 V,
I
D = 500mA
2N7002
0.6
3.75
V
GS = 5.0 V,
I
D = 50 mA
0.09
1.5
V
GS = 10 V,
I
D = 500mA
NDS7002A
0.6
1
V
GS = 5.0 V,
I
D = 50 mA
0.09
0.15
2N7000.SAM Rev. A1
相關(guān)PDF資料
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2N7002D87Z 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
2N7000D74Z 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
2N7000J18Z 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
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參數(shù)描述
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2N7000KL 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 60-V (D-S) MOSFET
2N7000KL 制造商:Vishay Intertechnologies 功能描述:MOSFET N TO-92
2N7000KL-TR1 功能描述:MOSFET 60V (DS) .47A .8W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2N7000KL-TR1-E3 功能描述:MOSFET 60V (DS) .47A .8W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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