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參數(shù)資料
| 型號： | 2N7000_ND26Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | LEAD FREE, TO-92, 3 PIN |
| 文件頁數(shù)： | 9/10頁 |
| 文件大?。?/td> | 235K |
| 代理商： | 2N7000_ND26Z |
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2N7000
N-Channel Enhancement Mode Field Effect Transistor
General description
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General description
Features
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These N-Channel enhancement mode field effect transistors are produced
using Fairchild's proprietary, high cell density, DMOS technology. These
products have been designed to minimize on-state resistance while provide
rugged, reliable, and fast switching performance. They can be used in most
applications requiring up to 400mA DC and can deliver pulsed currents up
to 2A. These products are particularly suited for low voltage, low current
applications such as small servo motor control, power MOSFET gate
drivers, and other switching applications.
High density cell design for extremely low RDS(ON).
Voltage controlled small signal switch.
Rugged and Relaible.
High saturation current capability.
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Pb-free Status
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2N7000
Full Production
$0.096
TO-92
3
BULK
Line 1: $Y (Fairchild logo)
&Z (Asm. Plant Code)
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Product Folder - Fairchild P/N 2N7000 - N-Channel Enhancement Mode Field Effect Transistor
16-Aug-2007
mhtml:file://C:\TEMP\2N7000_ND26Z.mht
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| 2N7000P | 功能描述:MOSFET - RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7000RLRA | 功能描述:MOSFET 60V 200mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7000RLRAG | 功能描述:MOSFET 60V 200mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7000RLRM | 功能描述:MOSFET 60V 200mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7000RLRMG | 功能描述:MOSFET 60V 200mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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