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參數(shù)資料
| 型號： | 2N7000-G |
| 廠商： | SUPERTEX INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-Channel Enhancement-Mode Vertical DMOS FETs |
| 中文描述： | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | GREEN PACKAGE-3 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 533K |
| 代理商： | 2N7000-G |
2
2N7000
Electrical Characteristics
(T
A
= 25°C unless otherwise specified)
Symbol
Parameter
BV
DSS
V
GS(th)
I
GSS
Min
60
0.8
-
-
Typ
-
-
-
-
Max
-
3.0
10
1.0
Units
V
V
nA
μA
Conditions
V
GS
= 0V, I
D
= 10μA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= ±15V, V
DS
= 0V
V
GS
= 0V, V
DS
= 48V
V
GS
= 0V, V
DS
= 48V,
T
A
= 125
O
C
V
GS
= 4.5V, V
DS
= 10V
V
GS
= 4.5V, I
D
= 75mA
V
GS
= 10V, I
D
= 500mA
V
DS
= 10V, I
D
= 200mA
Drain-to-source breakdown voltage
Gate threshold voltage
Gate body leakage current
I
DSS
Zero gate voltage drain current
-
-
1.0
mA
I
D(ON)
ON-state drain current
75
-
-
100
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
mA
R
DS(ON)
Static drain-to-source
ON-state resistance
5.3
5.0
-
60
25
5
10
10
-
Ω
G
FS
C
ISS
C
OSS
C
RSS
t
(ON)
t
(OFF)
V
SD
Forward transconductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-ON time
Turn-OFF time
Diode forward voltage drop
mmho
pF
V
= 0V, V
DS
= 25V,
f = 1.0MHz
ns
V
DD
= 15V, I
D
= 500mA,
R
GEN
= 25
0.85
V
V
GS
= 0V, I
SD
= 200mA
Notes:
1. All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300μs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
Thermal Characteristics
Device
Package
I
(continuous)
*
(mA)
200
I
(pulsed)
(mA)
500
Power Dissipation
@T
C
= 25
O
C
(W)
1.0
θ
(
O
C/W)
θ
(
O
C/W)
I
(mA)
*
I
(mA)
2N7000
Notes:
* I
D
(continuous) is limited by max rated T
J
.
TO-92
125
170
200
500
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
V
DD
R
GEN
0V
0V
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參數(shù)描述 |
|---|---|
| 2N7000-G P002 | 制造商:Supertex Inc 功能描述:N-Channel MOSFET |
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| 2N7000-G P014 | 制造商:Supertex Inc 功能描述:N-Channel MOSFET |
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