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參數(shù)資料
| 型號(hào)： | 2N6800LCC4 |
| 廠商： | SEMELAB LTD |
| 元件分類： | JFETs |
| 英文描述： | 3 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HERMETIC SEALED, CERAMIC, LCC4-18 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 96K |
| 代理商： | 2N6800LCC4 |
2N6800LCC4
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
DOC 7820, ISSUE 1
STATIC ELECTRICAL RATINGS (T
case=25°C unless otherwise stated)
Symbol
Parameter
Test Conditions
Min. Typ.
Max.
Unit
BV
DSS
Drain – Source Breakdown Voltage
V
GS = 0V
I
D = 250A
400
-
V
DS = 320V
V
GS = 0V
-
25
I
DSS
Zero Gate Voltage Drain Current
T
C = 125°C
-
250
A
I
GSS
Gate – Source Leakage Current
V
GS = ±20V
V
DS = 0V
-
±100
nA
V
DS ≥ VGS
I
D = 250A
2.0
-
4.0
T
C = 125°C
1.0
-
V
GS(TH)
Gate Threshold Voltage
T
C = -55°C
-
5.0
V
GS = 10V
I
D = 2A
-
1.0
T
C = 125°C
-
2.40
R
DS(ON)
Drain – Source On State Resistance
3
V
GS = 10V
I
D = 3A
-
1.15
g
FS
Forward Transconductance
3
V
DS ≥ 15V
I
DS = 2A
2
-
S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
-
620
-
C
oss
Output Capacitance
-
200
-
C
rss
Reverse Transfer Capacitance
V
DS = 25V
f = 1.0MHz
V
GS = 0V
-
75
-
pF
Q
g
Total Gate Charge
2
19.1
-
33
Q
gs
Gate – Source Charge
2
1.0
-
5.8
Q
gd
Gate – Drain Charge
2
V
DS = 200V
V
GS = 10V
I
D = 3A
6.7
-
19.9
nC
T
d(on)
Turn-On Delay
-
30
t
r
Rise Time
-
35
T
d(off)
Turn-Off Delay Time
-
55
t
f
Fall Time
V
DD = 200V
R
G = 7.5
I
D = 3A
V
GS = 10V
-
35
ns
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
Continuous Source Current (MAX)
-
3
I
SM
Pulsed Source Current (MAX)
1
-
12
A
V
SD
Diode Forward Voltage
2
V
GS = 0V
I
s = 3A
-
1.4
V
t
rr
Reverse Recovery Time
-
700
ns
Q
rr
Reverse Recovery Charge
2
V
GS = 0V
di/dt=100A/
s
I
s = 3A
V
DD ≤ 50V
-
6.2
C
相關(guān)PDF資料 |
PDF描述 |
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| 2N6800TXV | 3 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
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| 2N6800TXV | 3 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 2N6800TXV | 3 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 2N6800TX | 3 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6800U | 制造商:Microsemi Corporation 功能描述:N CHANNEL MOSFET - Bulk |
| 2N6800UJANTXV | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 400V 3A 18-Pin LLCC |
| 2N6801 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 2.5A I(D) | TO-39 |
| 2N6802 | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 500V 11A 3-Pin TO-39 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 500V 2.5A 3PIN TO-39 - Bulk 制造商:Microsemi Corporation 功能描述:N CHANNEL MOSFET - Bulk 制造商:International Rectifier 功能描述:MOSFET N TO-39 制造商:International Rectifier 功能描述:N CH MOSFET 500V 2.5A TO-20 制造商:International Rectifier 功能描述:MOSFET, N, TO-39 制造商:International Rectifier 功能描述:N CH MOSFET, 500V, 2.5A, TO-205AF; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: No |
| 2N6802JANTX | 制造商:International Rectifier 功能描述: |
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