參數(shù)資料
型號(hào)： 2N6768PBF
元件分類： JFETs
英文描述： 14 A, 400 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204
封裝： HERMETIC SEALED, TO-204, 2 PIN
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 64K
代理商： 2N6768PBF
Parameter
Min.
Typ.
Max.
Units
Test Conditions
BV
DSS
Drain-Source
100
V
GS = 0
V, I
D =1.0 mA,
Breakdown Voltage
R
DS(on)
Static Drain-to-Source
-
--
-
0.055
V
GS = 1
0 V, I
D = 24 A
3
On-State Resistance
-
--
-
0.065
V
GS = 1
0 V, I
D = 38 A
3
V
GS(th)
Gate Threshold Voltage
2.0
-
4.0
V
DS
= V
GS,
I
D = 250 A
I
DSS
Zero Gate Voltage Drain
-
--
-
25
A
V
DS = 80 V, VGS = 0V
Current
-
--
-
250
V
DS = 80 V, VGS = 0V, TJ = 125°C
I
GSS
Gate -to-Source Leakage Forward
-
--
-
100
nA
V
GS = 20 V
I
GSS
Gate -to-Source Leakage Reverse
-
--
-
-100
nA
V
GS = -20 V
Q
G(on)
On-state Gate Charge
50
-
125
nC
V
GS = 1
0 V, I
D = 38A
Q
GS
Gate-to-Source Charge
8
-
-22
nC
V
DS = 50 V
Q
Gd
Gate-to-Drain (“Miller”) Charge
25
-
65
nC
See note 4
t
D(on)
Turn-On Delay Time
-
--
-
-35
ns
V
DD = 5
0 V, I
D = 38A, RG =2.35
t
r
Rise Time
-
--
-
190
ns
See note 4
t
D(off)
Turn-Off Delay Time
-
--
-
170
ns
t
r
Fall Time
-
--
-
130
ns
Source-Drain Diode Ratings and Characteristics
Parameter
Min.
Typ.
Max.
Units
Test Conditions
V
SD
Diode Forward Voltage
-
--
-
1.9
V
T
J
= 25°C, I
S
= 38A
3,VGS = 0 V
t
r
Reverse Recovery Time
-
--
-
500
ns
T
J = 25°C, IF= 38A,d
i/dt< 100A/s
3
Thermal Resistance
Parameter
Min.
Typ.
Max.
Units
Test Conditions
R
thJC
Junction-to-Case
-
--
-
0.83
Mounting surface flat,
R
thCS
Case-to-sink
-
0.21
-
°C/W
smooth, and greased
R
thJA
Junction-to-Ambient
-
--
-
48
Typical socket mount
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
@V
DD= 50V, Starting TJ = 25°C, L = 100 H + 10%, RG = 25
, Peak I
L = 38A
3. Pulse width < 300 s; Duty Cycle < 2%
4. See MIL-S-19500/543
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
Parameter
JANTXV, JANTX, 2N6764
Units
I
D @
V
GS = 10V, TC = 25°C
Continuous Drain Current
38
A
I
D @
V
GS = 10V, TC = 100°C
Continuous Drain Current
24
A
I
DM
Pulsed Drain Current
1
152
A
P
D @
T
C = 25°C
Maximum Power Dissipation
150
W
Linear Derating Factor
1.2
W/°C
V
GS
Gate-Source Voltage
± 20
V
E
AS
Single Pulse Avalanche Energy
2
150
4
mJ
I
AR
Avalanche Current
1
38
4
A
TJ
Operating Junction
-55 to 150
°C
TSTG
Storage Temperature Range
Lead Temperature
300(.06 from case for 10 sec)
°C
ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)
ABSOLUTE MAXIMUM RATINGS (T
C = 25°C unless otherwise noted
2N6764, JANTX2N6764, JANTXV2N6764
2N6768, JANTX2N6768, JANTXV2N6768
2N6766, JANTX2N6766, JANTXV2N6766
2N6770, JANTX2N6770, JANTXV2N6770
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N6768T1 制造商:Microsemi Corporation 功能描述:MOSFET N CH 400V 14A TO-254AA
2N6769 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Power MOSFETs, 12A, 450V/500V
2N677 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 15A I(C) | TO-3
2N6770 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 500V 12A 3-Pin(2+Tab) TO-204AA 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 500V 12A 3PIN TO-204AA - Bulk 制造商:Microsemi Corporation 功能描述:2N6770 - Bulk 制造商:International Rectifier 功能描述:N CH MOSFET 500V 12A TO-204AA 制造商:International Rectifier 功能描述:N CH MOSFET, 500V, 12A, TO-204AA 制造商:International Rectifier 功能描述:N CH MOSFET, 500V, 12A, TO-204AA; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:500V; On Resistance Rds(on):400mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; No. of Pins:2;RoHS Compliant: No
2N6770_10 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:N-CHANNEL MOSFET
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