20MT120UF
VCES = 1200V
IC = 40A
T
C = 25°C
UltraFast Non Punch Through (NPT)
Technology
Positive VCE(ON)Temperature Coefficient
10s Short Circuit Capability
HEXFRED TM Antiparallel Diodes with
UltraSoft Reverse Recovery
Low Diode VF
Square RBSOA
Aluminum Nitride DBC
Very Low Stray Inductance Design for
High Speed Operation
UL approved (File E78996)
Features
Absolute Maximum Ratings
"FULL-BRIDGE" IGBT MTP
VCES
Collector-to-Emitter Breakdown Voltage
1200
V
I C
Continuos Collector Current
@ TC = 25°C
40
A
@ TC = 106°C
20
I CM
Pulsed Collector Current
100
I LM
Clamped Inductive Load Current
100
I F
Diode Continuous Forward Current
@ TC = 106°C
25
I FM
Diode Maximum Forward Current
100
VGE
Gate-to-Emitter Voltage
± 20
V
VISOL
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
2500
PD
Maximum Power Dissipation (only IGBT)
@ TC = 25°C
240
W
@ TC = 100°C
96
Parameters
Max
Units
UltraFast NPT IGBT
Optimized for Welding, UPS and SMPS
Applications
Rugged with UltraFast Performance
Benchmark Efficiency above 20KHz
Outstanding ZVS and Hard Switching
Operation
Low EMI, requires Less Snubbing
Excellent Current Sharing in Parallel
Operation
Direct Mounting to Heatsink
PCB Solderable Terminals
Very Low Junction-to-Case Thermal
Resistance
Benefits
MMTP
5/
I27124 rev. D 02/03
1
www.irf.com
相關(guān)PDF資料
PDF描述
2N6796LCC4-JQR-B 7.4 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
2SJ210-A 200 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SC4364-4 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SD1936V 800 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SJ552(L) 20 A, 60 V, 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET
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