- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄246851 > 2SD1936V 800 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | 2SD1936V |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 800 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SPA, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 101K |
| 代理商： | 2SD1936V |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
AF Amplifier Applications
Ordering number:ENN2468
2SB1296/2SD1936
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
10904TN (KT)/O1598HA (KT)/4207TA, TS No.2468—1/5
Package Dimensions
unit:mm
2033A
[2SB1296/2SD1936]
C
Electrical Characteristics at Ta = 25C
1 : Emitter
2 : Collector
3 : Base
SANYO : SPA
Applications
AF power amplifier, medium-speed switching, small-
sized motor drivers.
Features
Large current capacity.
Low collector to emitter saturation voltage.
Wide ASO.
( ) : 2SB1296
Specifications
Absolute Maximum Ratings at Ta = 25C
* : The 2SB1296/2SD1936 are classified by 50mA hFE as follows :
Continued on next page.
2SB1296
2SB1936
k
n
a
RS
T
U
h E
F
0
8
2
o
t
0
4
10
0
4
o
t
0
20
6
5
o
t
0
8
2
k
n
a
RS
T
U
V
h E
F
0
8
2
o
t
0
4
10
0
4
o
t
0
20
6
5
o
t
0
8
20
0
8
o
t
0
4
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
Cs
g
n
i
t
a
Rt
i
n
U
e
g
a
t
l
o
V
e
s
a
B
-
o
t
-
r
o
t
c
e
ll
o
CV
O
B
C
5
1
)
–
(V
e
g
a
t
l
o
V
r
e
t
i
m
E
-
o
t
-
r
o
t
c
e
ll
o
CV
O
E
C
5
1
)
–
(V
e
g
a
t
l
o
V
e
s
a
B
-
o
t
-
r
e
t
i
m
EV
O
B
E
5
)
–
(V
t
n
e
r
u
C
r
o
t
c
e
ll
o
CIC
8
.
0
)
–
(A
)
e
s
l
u
P
(
t
n
e
r
u
C
r
o
t
c
e
ll
o
CI P
C
3
)
–
(A
n
o
i
t
a
p
i
s
i
D
r
o
t
c
e
ll
o
CPC
0
3W
m
e
r
u
t
a
r
e
p
m
e
T
n
o
i
t
c
n
u
Jj
T
0
5
1
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
Sg
t
s
T
0
5
1
+
o
t
5
–
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
C
s
g
n
i
t
a
R
t
i
n
U
n
i
mp
y
tx
a
m
t
n
e
r
u
C
f
o
t
u
C
r
o
t
c
e
ll
o
CI
O
B
C
V B
C
I
,
V
2
1
)
–
(
=
E 0
=0
0
1
)
–
(A
n
t
n
e
r
u
C
f
o
t
u
C
r
e
t
i
m
EI
O
B
E
V B
E
I
,
V
4
)
–
(
=
C 0
=0
0
1
)
–
(A
n
i
a
G
t
n
e
r
u
C
D
h E
F 1V E
C
I
,
V
2
)
–
(
=
C
A
m
0
5
)
–
(
=
*
0
4
1*
)
0
6
5
(
*
0
8
h E
F 2V E
C
I
,
V
2
)
–
(
=
C
A
m
0
8
)
–
(
=0
8
4.0
0.4
0.5
0.4
0.6
15.0
3.0
1.8
12
3
2.2
0.4
1.3
3.0
3.8
0.7
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ552(L) | 20 A, 60 V, 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SK1166 | 12 A, 500 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1342 | 8 A, 900 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2N5877 | 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 2N3687 | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-72 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1938 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1938(F)-S(TX) | 制造商:Panasonic Industrial Company 功能描述: |
| 2SD1938FSL | 功能描述:TRANS NPN AF AMP 20VCEO MINI RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SD1938FTL | 功能描述:TRANS NPN AF AMP 20VCEO MINI RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SD1943 | 制造商:Distributed By MCM 功能描述:SUB ONLY ROHM TRANSISTOR TO-220AB 80V 3A 40W BCE |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。