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參數(shù)資料
| 型號： | 2N6691 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN POWER SILICON TRANSISTOR |
| 中文描述： | 15 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-61 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 70K |
| 代理商： | 2N6691 |
2N6676, 2N6678, 2N6691, 2N6693 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
2.0
1.0
1.0
Unit
Emitter-Base Cutoff Current
V
EB
= 8.0 Vdc
Collector-Base Cutoff Current
V
CB
= 450 Vdc
V
CB
= 650 Vdc
ON CHARACTERISTICS
(4)
Forward-Current Transfer Ratio
I
C
= 1.0 Adc; V
CE
= 3.0 Vdc
I
C
= 15 Adc; V
CE
= 3.0 Vdc
Collector-Emitter Saturation Voltage
I
C
= 15 Adc; I
B
= 3.0 Adc
Base-Emitter Saturation Voltage
I
C
= 15 Adc; I
B
= 3.0 Adc
DYNAMIC CHARACTERISTICS
Small-Signal Short-Circuit Forward Current Transfer Ratio
I
C
= 1.0 Adc; V
CE
= 10 Vdc, f = 5 MHz
Output Capacitance
V
CB
= 10 Vdc; I
E
= 0, 100 kHz
≤
f
≤
1.0 MHz
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Cross-Over Time
SAFE OPERATING AREA
DC Tests
T
C
= +25
0
C, 1 Cycle, t = 1.0 s
Test 1
V
CE
= 11.7 Vdc, I
C
= 15 Adc
Test 2
V
CE
= 30 Vdc, I
C
= 5.9 Adc
Test 3
V
CE
= 100 Vdc, I
C
= 0.25 Adc
Test 4
V
CE
= 25 Vdc, I
C
= 7.0 Adc
Test 5
V
CE
= 300 Vdc, I
C
= 20 mAdc
V
CE
= 400 Vdc, I
C
= 10 mAdc
Clamped Switching
T
A
= 25
0
C;
V
CC
= 15 Vdc
I
C
= 15 Adc; Clamped Voltage = 350 Vdc
I
C
= 15 Adc; Clamped Voltage = 450 Vdc
(4) Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
≤
2.0%.
I
EBO
mAdc
2N6676, 2N6691
2N6678, 2N6693
I
CBO
mAdc
h
FE
15
8.0
40
20
V
CE(sat)
1.0
Vdc
V
BE(sat)
1.5
Vdc
h
fe
3.0
10
C
obo
150
500
pF
t
d
t
r
t
s
t
f
t
c
0.1
0.6
2.5
0.5
0.5
μ
s
μ
s
μ
s
μ
s
μ
s
See Figure 3 of MIL-PRF-19500/538
All Types
2N6676, 2N6678
All Types
2N6691, 2N6693
2N6676, 2N6691
2N6678, 2N6693
2N6676, 2N6691
2N6678, 2N6693
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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PDF描述 |
|---|---|
| 2N6693 | NPN POWER SILICON TRANSISTOR |
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| 2N6728 | PNP SILICON PLANAR MEDIUM POWER TRANSISTORS |
| 2N6729 | PNP SILICON PLANAR MEDIUM POWER TRANSISTORS |
| 2N6730 | PNP SILICON PLANAR MEDIUM POWER TRANSISTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6692 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 350V 15A 3PIN TO-61 - Bulk |
| 2N6693 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 400V 15A 3PIN TO-61 - Bulk |
| 2N6701 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 50MA I(C) | MICRO-X |
| 2N6702 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:HIGH-CURRENT, SILICON N-P-N VERSAWATT TRANSISTORS |
| 2N6703 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:High-Current silicon NPN Versawatt Transistors |
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