參數(shù)資料
型號(hào): 2N6660-2
廠商: VISHAY SILICONIX
元件分類(lèi): 小信號(hào)晶體管
英文描述: 1100 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD
封裝: TO-39, 3 PIN
文件頁(yè)數(shù): 2/5頁(yè)
文件大?。?/td> 78K
代理商: 2N6660-2
2N6660, VQ1004J/P
Vishay Siliconix
www.vishay.com
11-2
Document Number: 70222
S-04379—Rev. E, 16-Jul-01
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N6660
VQ1004J/P
Parameter
Symbol
Test Conditions
Typa
Min
Max
Min
Max
Unit
Static
Drain-Source
Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 10 mA
75
60
V
Gate-Threshold Voltage
VGS(th)
VDS = VGS, ID = 1 mA
1.7
0.8
2
0.8
2.5
V
VDS = 0 V, VGS = "15 V
"100
Gate-Body Leakage
IGSS
TC = 125_C
"500
nA
VDS = 60 V, VGS = 0 V
10
VDS = 35 V, VGS = 0 V
Zero Gate
VDS = 48 V, VGS = 0 V
1
m
Zero Gate
Voltage Drain Current
IDSS
TC = 125_C
500
mA
VDS = 28 V, VGS = 0 V
TC = 125_C
On-State Drain Currentb
ID(on)
VDS = 10 V, VGS = 10 V
3
1.5
A
VGS = 5 V, ID = 0.3 Ad
2
5
Drain-Source On-Resistanceb
rDS(on)
VGS = 10 V, ID = 1 A
1.3
3
3.5
W
TC = 125_Cd
2.4
4.2
4.9
Forward Transconductanceb
gfs
VDS = 10 V, ID = 0.5 A
350
170
Common Source
Output Conductanceb
gos
VDS = 10 V, ID = 0.1 A
1
mS
Diode Forward Voltage
VSD
IS = 0.99 A, VGS = 0 V
0.8
V
Dynamic
Input Capacitance
Ciss
35
50
60
Output Capacitance
Coss
VDS = 24 V, VGS = 0 V
25
40
50
Reverse Transfer Capacitance
Crss
VDS = 24 V, VGS = 0 V
f = 1 MHz
7
10
pF
Drain-Source Capacitance
Cds
30
40
Switchingc
Turn-On Time
tON
VDD = 25 V, RL = 23 W
^
8
10
Turn-Off Time
tOFF
ID ^ 1 A, VGEN = 10 V
RG = 25 W
8.5
10
ns
Notes
a.
For DESIGN AID ONLY, not subject to production testing.
VNDQ06
b.
Pulse test: PW
v80 ms duty cycle v1%.
c.
Switching time is essentially independent of operating temperature.
d.
This parameter not registered with JEDEC on 2N6660.
相關(guān)PDF資料
PDF描述
2N6660-G 410 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-39
2N6660B-1 1100 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD
2N6660B-2 1100 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD
2N6660 2000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-39
2N6660 990 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N6660C4 制造商:SEME-LAB 制造商全稱(chēng):Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
2N6660CSM4 制造商:SEME-LAB 制造商全稱(chēng):Seme LAB 功能描述:N–CHANNEL ENHANCEMENT MODE MOSFET
2N6660CSM4_0809 制造商:SEME-LAB 制造商全稱(chēng):Seme LAB 功能描述:N–CHANNEL ENHANCEMENT MODE MOSFET
2N6660-E3 功能描述:MOSFET 60V 0.99A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2N6660-E3 制造商:Vishay Siliconix 功能描述:N CH MOSFET 60V 1.1A TO-205AD