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參數(shù)資料
| 型號： | 2N6609G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 16 A, 140 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | CASE 1-07, TO-3, 2 PIN |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 124K |
| 代理商： | 2N6609G |
NPN 2N3773*, PNP 2N6609
http://onsemi.com
48
30
3.0
Figure 16. Forward Bias Safe Operating Area
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
20
10
5.0
3.0
2.0
1.0
0.5
0.03
5.0 7.0
10
20
30
50
300
BONDING WIRE LIMIT
THERMAL LIMIT
@ TC = 25°C, SINGLE PULSE
SECOND BREAKDOWN LIMIT
70
0.3
0.2
I C
,COLLECT
OR
CURRENT
(AMP)
dc
10
ms
100
ms
100 ms
0.1
0.05
100
200
40
ms
200
ms
1.0 ms
500 ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation: i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 7 is based on TJ(pk) = 200_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
< 200
_C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
100
80
60
40
0
20
0
40
80
120
160
200
Figure 17. Power Derating
TC, CASE TEMPERATURE (°C)
POWER
DERA
TING
F
ACT
OR
(%)
THERMAL
DERATING
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