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參數(shù)資料
| 型號： | 2N6609G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 16 A, 140 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | CASE 1-07, TO-3, 2 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 124K |
| 代理商： | 2N6609G |
NPN 2N3773*, PNP 2N6609
http://onsemi.com
46
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS (Note 3)
CollectorEmitter Breakdown Voltage (Note 4)
(IC = 0.2 Adc, IB = 0)
VCEO(sus)
140
Vdc
CollectorEmitter Sustaining Voltage (Note 4)
(IC = 0.1 Adc, VBE(off) = 1.5 Vdc, RBE = 100 Ohms)
VCEX(sus)
160
Vdc
CollectorEmitter Sustaining Voltage
(IC = 0.2 Adc, RBE = 100 Ohms)
VCER(sus)
150
Vdc
Collector Cutoff Current (Note 4)
(VCE = 120 Vdc, IB = 0)
ICEO
10
mAdc
Collector Cutoff Current (Note 4)
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)
ICEX
2
10
mAdc
Collector Cutoff Current
(VCB = 140 Vdc, IE = 0)
ICBO
2
mAdc
Emitter Cutoff Current (Note 4)
(VBE = 7 Vdc, IC = 0)
IEBO
5
mAdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = 8 Adc, VCE = 4 Vdc) (Note 4)
(IC = 16 Adc, VCE = 4 Vdc)
hFE
15
5
60
CollectorEmitter Saturation Voltage
(IC = 8 Adc, IB = 800 mAdc) (Note 4)
(IC = 16 Adc, IB = 3.2 Adc)
VCE(sat)
1.4
4
Vdc
BaseEmitter On Voltage (Note 4)
(IC = 8 Adc, VCE = 4 Vdc)
VBE(on)
—
2.2
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of CommonEmitter
SmallSignal, ShortCircuit, Forward Current Transfer Ratio
(IC = 1 A, f = 50 kHz)
|hfe|
4
SmallSignal Current Gain (Note 4)
(IC = 1 Adc, VCE = 4 Vdc, f = 1 kHz)
hfe
40
SECOND BREAKDOWN CHARACTERISTICS
Second Breakdown Collector Current with Base Forward Biased
t = 1 s (nonrepetitive), VCE = 100 V, See Figure 12
IS/b
1.5
Adc
3. Pulse Test: Pulse Width = 300
ms, Duty Cycle v 2%.
4. Indicates JEDEC Registered Data.
ORDERING INFORMATION
Device
Package
Shipping
2N3773
TO204
100 Unit / Tray
2N3773G
TO204
(PbFree)
100 Unit / Tray
2N6609
TO204
100 Unit / Tray
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi-
cations Brochure, BRD8011/D.
相關(guān)PDF資料 |
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| 2N6660-2 | 1100 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD |
| 2N6660-G | 410 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-39 |
| 2N6660B-1 | 1100 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD |
| 2N6660B-2 | 1100 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD |
| 2N6660 | 2000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-39 |
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