參數(shù)資料
型號(hào): 2N6609
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: 16 A, 140 V, PNP, Si, POWER TRANSISTOR, TO-204AA
封裝: TO-3, 2 PIN
文件頁數(shù): 4/6頁
文件大?。?/td> 205K
代理商: 2N6609
2N3773 2N6609
4
Motorola Bipolar Power Transistor Device Data
30
3.0
Figure 7. Forward Bias Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
20
10
5.0
3.0
2.0
1.0
0.5
0.03
5.0 7.0
10
20
30
50
300
BONDING WIRE LIMIT
THERMAL LIMIT
@ TC = 25°C, SINGLE PULSE
SECOND BREAKDOWN LIMIT
70
0.3
0.2
I C
,COLLECT
OR
CURRENT
(AMP)
dc
10
s
100
s
100 ms
0.1
0.05
100
200
40
s
200
s
1.0 ms
500 ms
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation:
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 7 is based on TJ(pk) = 200_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
< 200
_C. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
100
80
60
40
0
20
0
40
80
120
160
200
Figure 8. Power Derating
TC, CASE TEMPERATURE (°C)
POWER
DERA
TING
F
ACT
OR
(%)
THERMAL
DERATING
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